Imaging apparatus and methods
View Patent ↗Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.
1. An apparatus comprising:
a plurality of pixels configured to detect radiation incident thereon, the plurality of pixels comprising a first pixel comprising:
a first photodetector comprising germanium and configured to produce a first photoresponse indicative of a quantity of radiation incident thereon;
a second photodetector comprising silicon and configured to produce a second photoresponse indicative of a quantity of radiation incident thereon; and
readout circuitry configured to read out the first photoresponse and the second photoresponse,
wherein the second photodetector is configured to receive radiation that bypasses the first photodetector, and
wherein the second photodetector, when viewed from an imaging side of the first pixel, is shaped approximately as a closed contour encompassing the first photodetector.
2. The apparatus of claim 1 , further comprising a substrate and a dielectric layer formed on the substrate, wherein the first photodetector is formed in the dielectric layer and the second photodetector is formed in the substrate.
3. The apparatus of claim 2 , wherein the substrate is silicon.
4. The apparatus of claim 1 , wherein the first photodetector is configured to detect short wavelength infrared radiation incident on the first pixel and wherein the second photodetector is configured to detect visible radiation incident on the first pixel.
5. The apparatus of claim 1 , wherein the first pixel further comprises a filter configured to block at least some radiation incident on the first pixel from reaching the first photodetector and/or the second photodetector.
6. The apparatus of claim 5 , wherein the filter functions to pass at least some short wavelength infrared radiation and radiation from the visible spectrum corresponding to only a single color selected from red, green, blue, yellow, cyan, and magenta.
7. The apparatus of claim 5 , wherein the filter functions to absorb a first range of wavelengths in a short wavelength infrared (SWIR) spectrum and to pass a second range of wavelengths in the SWIR spectrum.
8. The apparatus of claim 1 , wherein the readout circuitry is configured to read out the first photoresponse and the second photoresponse as a single signal.
9. The apparatus of claim 8 , wherein the plurality of pixels are formed on a chip, and wherein the readout circuitry is configured to form a linear combination of the first photoresponse and the second photoresponse on the chip.
10. The apparatus of claim 8 , wherein the plurality of pixels are formed on a chip, and wherein the readout circuitry is configured to provide the first photoresponse and the second response off the chip, and is further configured to form a linear combination of the first photoresponse and the second photoresponse off the chip.
11. The apparatus of claim 1 , wherein the plurality of pixels comprises a first subset of pixels comprising the first pixel, a second subset of pixels, and a third subset of pixels, and wherein the first subset of pixels, the second subset of pixels, and the third subset of pixels are arranged in repeating pixel groups.
12. The apparatus of claim 11 , wherein each pixel of the first subset of pixels comprises at least one photodetector configured to detect a first visible color of radiation incident thereon, each pixel of the second subset of pixels comprises at least one photodetector configured to detect a second visible color of radiation incident thereon, and each pixel of the third subset of pixels comprises at least one photodetector configured to detect a third visible color of radiation incident thereon.
13. The apparatus of claim 12 , wherein each pixel of the plurality of pixels comprises at least one photodetector configured to detect short wavelength infrared radiation.
14. The apparatus of claim 1 , wherein the second photodetector comprises a larger surface area than the first photodetector.
15. An apparatus comprising:
a silicon substrate;
a plurality of pixels formed on the silicon substrate and configured to detect radiation incident thereon, the plurality of pixels comprising a first pixel, the first pixel comprising
a first photodetector formed of silicon; and
a second photodetector formed of a semiconductor material other than silicon; and
readout circuitry configured to read out a first photoresponse of the first photodetector and a second photoresponse of the second photodetector,
wherein the second photodetector is configured to receive radiation that bypasses the first photodetector, and
wherein the second photodetector, when viewed from an imaging side of the first pixel, is shaped approximately as a closed contour encompassing the first photodetector.
16. The apparatus of claim 15 , wherein the semiconductor material other than silicon of which the second photodetector is formed comprises germanium.
17. The apparatus of claim 16 , wherein the semiconductor material other than silicon of which the second photodetector is formed comprises substantially pure germanium.
18. The apparatus of claim 15 , wherein the first photodetector is formed in the silicon substrate.