Method for manufacturing solar cell and solar cell manufactured by the method
View Patent ↗A method for manufacturing a solar cell includes (S 1 ) forming, on a first conductive semiconductor substrate, a second conductive semiconductor layer having an opposite conduction type by means of ion implantation to form a pn junction in an interface thereof; (S 2 ) treating an alkali solution on the second conductive semiconductor layer for texturing; (S 3 ) forming an antireflection film on the textured second conductive semiconductor layer; (S 4 ) forming a front electrode to pass through a partial region of the antireflection film and connect to a part of the second conductive semiconductor layer; and (S 5 ) forming a rear electrode at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween such that the rear electrode is connected to the first conductive semiconductor substrate. The second conductive semiconductor layer, namely an emitter layer, functions as an etch stop layer.
1. A method for manufacturing a solar cell, comprising:
forming, on a surface of a first conductive semiconductor substrate of a first conductive type, a second conductive semiconductor layer of a second conduction type opposite to the first conductive type and having a first portion and a second portion having an ion concentration higher than that of the first portion, in which ions are implanted by means of ion implantation;
etching the first portion of the second conductive semiconductor, to texture the first portion;
forming a first electrode connected to the second conductive semiconductor layer; and
forming a second electrode connected to the first conductive semiconductor substrate,
wherein a distance from an outer surface of the second conductive semiconductor layer to the first portion is less than a distance from the outer surface to the second portion.
2. The method for manufacturing a solar cell according to claim 1 , wherein the texturing of the first portion etches the first portion using alkali solution and the alkali solution includes an alkali selected from the group consisting of sodium hydroxide, potassium hydroxide and ammonium hydroxide.
3. The method for manufacturing a solar cell according to claim 1 , further comprising forming an antireflection film on the textured second conductive semiconductor layer, and the first electrode is connected to a portion of the second conductive semiconductor layer passing through a portion of the antireflection film.
4. The method for manufacturing a solar cell according to claim 2 , wherein a processing time of the alkali solution is 10 to 90 minutes.
5. The method for manufacturing a solar cell according to claim 3 , wherein the antireflection film is formed using silicon nitride.
6. The method for manufacturing a solar cell according to claim 3 , wherein the antireflection film is formed using PECVD (Plasma_Enhanced Chemical Vapor Deposition) or CVD (Chemical Vapor Deposition).
7. The method for manufacturing a solar cell according to claim 1 , wherein the first conductive type is p type, and the second conductive type is an n type.
8. A solar cell comprising:
a first conductive semiconductor substrate of a first conductive type;
a second conductive semiconductor layer formed in the first conductive semiconductor substrate, having a first portion and a second portion having an ion concentration higher than that of the first portion, in which ions are implanted, and having a second conductive type opposite to the first conductive type;
a first electrode connected to the second conductive semiconductor layer; and
a second electrode connected to the first conductive semiconductor substrate,
wherein a distance from an outer surface of the second conductive semiconductor layer to the first portion is less than a distance from the outer surface to the second portion and the first portion is textured.
9. The solar cell of claim 8 , further comprising an antireflection film on the second conductive semiconductor layer, and the first electrode is connected to the second conductive semiconductor layer passing through a portion of the antireflection film.