Material based on SiAlONs
Sialon materials contain HFO 2 in a maximum of 1 mass-% as a sintering additive, methods of producing them and methods of using them an α/β-SiAlON material with 5 mass % to 50 mass %, α/(α/β) RE-α-SiAlON wherein RE stands for at least one cation selected from the group consisting of Y, Sc, Lu, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Mg or Ca, and 95 mass % to 50 mass %, β/(α/β) β-SiAlON and of an Hf-containing amorphous or partially crystalline grain-boundary phase with a proportion with respect to the overall material is below 10 vol %, wherein the Hf content of the sintered material is 0.2 mass % to 1.0 mass %, and of a dispersion phase comprising globular particles with a mean particle size of from 0.2 μm to 15 μm, containing at least one hard material selected from the group consisting of SiC, TiN, TiC, Ti(C,N), carbides of further elements of groups IVb, Vb and VIb of the periodic system, nitrides of further elements of groups IVb, VB and VIb of the periodic system, scandium carbide and scandium oxycarbide, which are contained in the sintered compact in a proportion from 5 vol % to 30 vol %.
1. A sintered material based on SiAlONs, comprising an α/β-SiAlON material with 5 mass % to 50 mass %, α/(α+β) RE-α-SiAlON wherein RE stands for at least one cation selected from the group consisting of Y, Sc, Lu, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, and additionally at least one cation selected from the group consisting of Mg and Ca, and 95 mass % to 50 mass %, β/(α+β) β-SiAlON and Hf-containing amorphous or partially crystalline grain-boundary phase, wherein said sintered material has an Hf content of from 0.2 mass % to 1.0 mass %, and a dispersion phase comprising globular particles with a mean particle size of from 0.2 μm to 15 μm, containing at least one hard material selected from the group consisting of SiC, TiN, TiC, Ti(C,N), scandium carbide and scandium oxycarbide, which are contained in the sintered compact in a proportion from 5 vol % to 30 vol %, wherein the globular particles do not contain HfN or HfC.
2. A sintered material according to claim 1 , wherein the Hf content ranges from 0.4 mass % to 0.6 mass %.
3. A sintered material according to claim 2 , wherein the Si 3 N 4 powder exhibits a specific surface area of ≧10 m 2 /g.
4. A sintered material according to claim 1 , wherein the hard-material particles have a grain size between 0.2 μm and 15 μm.
5. A sintered material according to claim 4 , containing SiC having a grain size of 0.6 μm.
6. A sintered material according to claim 1 , wherein the theoretical density is greater than 99%.
7. A sintered compact comprising material according to claim 1 in sintered form, wherein the sintered compact is a cutting tool.
8. A process for producing a sintered material based on SiAlONs according to claim 1 comprising the steps of:
axial pressing a binder-containing pressed granular material at 140 MPa to 200 MPa,
debinding at a temperature matched to the binder, and
subsequently sintering at a temperature between 1750° C. and 2000° C. to yield a sintered compact comprising the sintered material.
9. A process according to claim 8 , wherein a raw-material mixture of the α/β-SiAlON—SiC material of the composition α/β-SiAlON and α/(α+β) RE-α-SiAlON comprising Si 3 N 4 , Al 2 O 3 , AlN, MgO, Y 2 O 3 , HfO 2 and hard-material particles of the SiC, TiN, TiC, Ti(C,N), carbides in a grain size from 0.2 μm to 15 μm with a proportion from 5 vol % to 30 vol %, and having a proportion of HfO 2 from 0.2 mass % to 1.0 mass %, is produced, wherein the atomic % ratio of Y to Mg is 7.0 to 10.0, and wherein the Si 3 N 4 powder has a grain size of D50≦1 μm and a specific surface area ≧10 m 2 /g.
10. A process according to claim 8 , wherein the mixture is subjected to gas-pressure sintering at 1930° C. and at 100 bar gas pressure in a dwell-time of 3 hours.
11. A sintered compact, produced by a process according to claim 8 , wherein the sintered compact is a cutting tool.