Piezoelectric sensor arrangement comprising a thin layer shear wave resonator based on epitactically grown piezoelectric layers
The invention relates to piezoelectric sensor arrangements, especially sensor arrangements that can be operated in a measuring fluid, in order to be able to detect, for example, elastic properties of the measuring fluid itself or the presence and/or concentration of analyte molecules in the fluid. According to the invention, the sensor arrangement comprises an acoustic resonator which has a sensitive region and is arranged such that a resonance frequency of the sensor arrangement varies according to properties of the measuring fluid. The acoustic resonator is formed by a piezoelectric thin layer resonator and the sensitive region is produced by means of epitaxy, such that transversally polarized vibration modes can be induced.
1. Piezoelectric sensor arrangement for the operation in a measuring medium, wherein the sensor arrangement comprises an acoustic resonator with a sensitive area, which is arranged such that a resonant frequency of the sensor arrangement can change in response to one or more properties of the measuring medium,
wherein the acoustic resonator comprises a piezoelectric thin film resonator, and wherein a piezoelectric layer of the film resonator comprises a group III Nitride layer with an orientation differing from the c-axis and is epitaxially fabricated in a way that transversally polarized oscillation modes are excited during a measurement, and
wherein the acoustic resonator is designed such that a minimum of two oscillation modes with differing frequencies and differing thermal responses are excited during the measurement in order to calculate the compensation for the thermal response of the piezoelectric sensor arrangement.
2. Piezoelectric sensor arrangement according to claim 1 , wherein the piezoelectric layer comprises a Gallium Nitride layer.
3. Piezoelectric sensor arrangement according to claim 1 , wherein the piezoelectric layer comprises an Aluminium Nitride layer.
4. Piezoelectric sensor arrangement according to claim 1 , wherein the piezoelectric layer comprises a Al(1-x)Gax-Nitride layer, where 0≦x≦1.
5. Piezoelectric sensor arrangement according to claim 1 , wherein the piezoelectric layer comprises a Al(1-x-y)GaxIny-Nitride layer, where 0≦x≦1 and 0≦y≦1.
6. Piezoelectric sensor arrangement according to claim 1 , wherein the piezoelectric thin film resonator has a membrane-type design with an acoustic total reflection on the backside of the piezoelectric sensor arrangement.
7. Piezoelectric sensor arrangement according to claim 1 , wherein the piezoelectric thin film resonator comprises a buried acoustic Bragg reflector which is designed for total reflection on the backside of the piezoelectric sensor arrangement.
8. Piezoelectric sensor arrangement according to claim 1 , wherein the acoustic resonator contains a sensitive area which is composed from a selective, reversible binding detection layer for the measuring of an analyte within the measuring medium, wherein the presence and/or the concentration of the analyte is detected with a frequency change due to the absorption of the analyte.
9. Piezoelectric sensor arrangement according to claim 1 , wherein the acoustic resonator has a sensitive area, which is implemented such that the elastic properties of the measuring medium are detected through the change in the resonant frequency of the thin film resonator.
10. Piezoelectric sensor arrangement according to claim 9 , wherein the measuring medium is a mineral oil in an automobile and the detecting elastic property is the viscosity of the oil.
11. Piezoelectric sensor arrangement according to claim 1 , which is operated in a gaseous measuring medium.
12. Piezoelectric sensor arrangement according to claim 1 , which is operated in a liquid measuring medium.