Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
View Patent ↗In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield. A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.
1. A method for fabricating a semiconductor light emitting element, comprising the steps of:
forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;
partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;
bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;
grinding the substrate;
bonding a support substrate to the ground substrate surface;
detaching the grinding board from the substrate to which the support substrate is bonded;
forming a notch in the n-type layer;
performing a singulation operation; and
detaching the support substrate.
2. A method for fabricating a semiconductor light emitting device, comprising the steps of:
forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;
partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;
bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;
grinding the substrate;
bonding a support substrate to the ground substrate surface;
detaching the grinding board from the substrate to which the support substrate is bonded;
forming a notch in the n-type layer;
performing a singulation operation;
connecting the n-side electrode and the p-side electrode to a submount provided with a lead-out electrode; and
detaching the support substrate.
3. The method of claim 2 comprising, after the step of detaching the support substrate, a step of forming a phosphor-containing sealing layer.
4. A method for fabricating a semiconductor light emitting element, comprising the steps of:
forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;
partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;
bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;
grinding the substrate;
giving a total reflection prevention treatment to the ground substrate surface;
bonding a support substrate to the substrate surface to which the total reflection prevention treatment is given;
detaching the grinding board from the substrate to which the support substrate is bonded;
forming a notch in the n-type layer;
performing a singulation operation; and
detaching the support substrate.
5. A method of fabricating a semiconductor light emitting device, comprising the steps of:
forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;
partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;
bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;
grinding the substrate;
giving a total reflection prevention treatment to the ground substrate surface;
bonding a support substrate to the substrate surface to which the total reflection prevention treatment is given;
detaching the grinding board from the substrate to which the support substrate is bonded;
forming a notch in the n-type layer;
performing a singulation operation;
connecting the n-side electrode and the p-side electrode to a submount provided with a lead-out electrode; and
detaching the support substrate.
6. The method of claim 5 comprising, after the step of detaching the support substrate, a step of forming a phosphor-containing sealing layer.