The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
1. Upstanding nanostructured LED comprising a substrate and a nanowire protruding from the substrate, wherein a bulb is arranged in connection with the nanowire and at an elevated position with regards to the substrate, the bulb having a larger diameter than the nanowire, and the bulb comprising an active region to produce visible or longer wavelength light,
wherein a distance from a lower end of the bulb to the substrate is equal to or greater than a quarter of a wavelength of the light emitted by the LED.
2. LED according to claim 1 , wherein the bulb is epitaxially connected to the nanowire and arranged to provide a high degree of doping for a formation of a pn-junction associated with the active region.
3. The nanostructured LED according to claim 2 , wherein a reflecting structure is provided in the nanowire and the reflecting structure is a multilayered structure.
4. LED according to claim 1 , wherein a distance between the active region and a surface of the bulb is in a same order of magnitude in essentially all directions.
5. LED according to claim 4 , wherein the bulb is cylindrical.
6. LED according to claim 4 , wherein the bulb is spherical.
7. LED according to claim 4 , wherein a diameter of the bulb is about 500 nm.
8. LED according to claim 1 , wherein the bulb comprises at least two layers in a shell-like structure on the nanowire and the active region is provided in one of the layers and extends radially outwards from the nanowire.
9. LED according to claim 1 , wherein the elevation of the bulb with respect to the substrate is more than 30 nm.
10. LED according to claim 1 , wherein the substrate is provided with a reflecting layer.
11. The nanostructured LED according to claim 10 , wherein the reflecting layer is a multilayered structure.
12. The nanostructured LED according to claim 10 , wherein a reflecting structure is provided by the reflective layer radially overlapping with the active region.
13. The nanostructured LED according to claim 10 , wherein a reflecting structure is provided by the reflective layer extending under a part of the nanowire and covering an outer portion of the cross section of the nanowire.
14. The nanostructured LED according to claim 10 , wherein the reflecting layer is provided on an opposite side of the substrate as compared to the nanowire.
15. The nanostructured LED according to claim 1 , wherein a composition of the nanowire is adjusted in the direction of emitted light to raise the band gap compared to the energy of the emitted light.
16. The nanostructured LED according to claim 1 , wherein the light is visible.
17. The nanostructured LED according to claim 1 , wherein the bulb has bulk properties.