Power control using in-situ test circuit to measure performance capability of processing circuitry

1. A method comprising:

sensing an ambient temperature at an electronic apparatus;

measuring performance capability of processing circuitry of the apparatus using an in-situ test circuit associated with the processing circuitry; and

switching between a first processing mode of said electronic apparatus and a second processing mode of said electronic apparatus, said method further comprising:

a) estimating total power consumption of the first processing mode of the processing circuitry when processing a defined load at a sensed ambient temperature, using the measured performance capability;

b) estimating total power consumption of the second processing mode of the processing circuitry, when processing the defined load at the sensed ambient temperature, using the measured performance capability; and

c) selecting the processing mode with the lower estimated power consumption when processing the defined load at the sensed ambient temperature.

2. A method as claimed in claim 1 , wherein the estimated total power consumption in the first processing mode is temperature dependent and estimated total power consumption in the second processing mode is separately temperature dependent.

3. A method as claimed in claim 1 , further comprising repeating steps a), b) and c) when the sensed ambient temperature changes.

4. A method as claimed in claim 1 , wherein the selection is dependent upon the sensed ambient temperature.

5. A method as claimed in claim 1 , further comprising repeating steps a), b) and c) when the defined load changes.

6. A method as claimed claim 1 , wherein the selection is dependent upon the defined load.

7. A method as claimed in claim 1 , further comprising modeling a leakage current within the electronic apparatus and using said model to estimate the power dissipated by the leakage current.

8. A method as claimed in claim 7 , wherein the power dissipated by the leakage current is a device specific value corrected for temperature.

9. A method as claimed in claim 1 , further comprising:

detecting a characteristic of processing circuitry;

estimating total power consumption of a first processing mode of the processing circuitry, when processing a defined load, using the detected characteristic;

estimating total power consumption of a second processing mode of the processing circuitry, when processing a defined load, using the detected characteristic; and

selecting the processing mode based on the estimated total power consumptions for the first processing mode and the second processing mode.

10. An apparatus comprising:

an ambient temperature sensor for sensing ambient temperature;

processing circuitry having a first processing mode and a second, different, processing mode;

an in-situ test circuit associated with the processing circuitry, configured to measure performance capability of the processing circuitry; and

a controller for selecting the processing mode of the processing circuitry in response to the sensed ambient temperature, using the measured performance capability, wherein the controller is operable to:

a) estimate total power consumption of the first processing mode of the processing circuitry when processing a defined load at a sensed ambient temperature, using the measured performance capability;

b) estimate total power consumption of the second processing mode of the processing circuitry, when processing the defined load at the sensed ambient temperature, using the measured performance capability; and

c) select the processing mode with the lower estimated power consumption when processing the defined load at the sensed ambient temperature.

11. An apparatus as claimed in claim 10 , wherein the controller is operable to select a processing mode when the sensed ambient temperature changes.

12. An apparatus as claimed in 10 , wherein the controller is operable to select a processing mode when the defined load changes.

13. An apparatus as claimed in claim 12 , wherein the controller is operable to use a model of a leakage current within the processing circuitry to estimate the power dissipated by the leakage current.

14. An apparatus as claimed in claim 13 , wherein the power dissipated by the leakage current is a device specific value corrected for temperature.

15. An apparatus as claimed in claim 10 , wherein the first processing mode is a continuous processing mode.

16. An apparatus as claimed in claim 10 , wherein the first processing mode is one of a plurality of selectable modes each mode having a different clock rate.

17. An apparatus as claimed in claim 10 , wherein the second processing mode is a discontinuous processing mode.

18. An apparatus as claimed in claim 10 , wherein the first processing mode is one of a plurality of selectable modes each mode having a different duty cycle.

19. A method comprising:

measuring performance capability of processing circuitry, using an in-situ test circuit associated with the processing circuitry;

estimating total power consumption of a first processing mode of the processing circuitry, when processing a defined load, using the measured performance capability;

estimating total power consumption of a second processing mode of the processing circuitry, when processing a defined load, using the measured performance capability; and

selecting the processing mode based on the estimated total power consumptions for the first processing mode and the second processing mode.