IP Library Granted Patent US 8,642,187
Granted Patent B2
US 8,642,187 · App. 12/521,387 · Granted Feb 4, 2014

Structural member to be used in apparatus for manufacturing semiconductor or flat display, and method for producing the same

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Quick Facts
Patent No.
US 8,642,187
App. No.
12/521,387
Granted
Feb 4, 2014
Kind
B2
Abstract

A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film.

Claims (12)

1. A structural member comprising:

a metal base member comprising aluminum,

an aluminum film having a purity of 99.99 wt % or more, the film formed to a thickness of 0.2 μm to 1.0 μm on a surface of the metal base member by CVD or sputtering, and

a nonporous amorphous aluminum oxide passivation film formed by anodizing the aluminum film,

wherein the nonporous amorphous aluminum oxide passivation film is formed by anodizing a surface of the aluminum film in an anodizing solution of pH 4 to 10 which comprises a nonaqueous solvent that dissolves water and that has a dielectric constant less than a dielectric constant of water.

2. The structural member of claim 1 , wherein the nonporous amorphous aluminum oxide passivation film exhibits a water release amount of 1E18 molecules/cm 2 or less.

3. The structural member of claim 1 , wherein the metal base member comprises 50 wt % or more of aluminum and 1 to 4.5 wt % of magnesium.

4. The structural member of claim 3 , wherein the metal base member comprises 0.15 wt % or less of zirconium.

5. The structural member of claim 3 , wherein a total content of elements other than aluminum, magnesium, and zirconium is 1 wt % or less in the metal base member.

6. The structural member of claim 5 , wherein a content of each of the elements other than aluminum, magnesium, and zirconium is 0.01 wt % or less in the metal base member.

7. The structural member of claim 1 , wherein the nonaqueous solvent comprises at least one solvent selected from the group consisting of ethylene glycol, diethylene glycol, triethylene glycol, and tetraethylene glycol.

8. A manufacturing apparatus for an electronic device, comprising the structural member of claim 1 .

Assignments (3)
CHANGE OF NAME Recorded Sep 5, 2017
From: MITSUBISHI RAYON CO., LTD.
To: MITSUBISHI CHEMICAL CORPORATION
Reel/Frame 043750/0834 →
MERGER Recorded Sep 4, 2017
From: MITSUBISHI CHEMICAL CORPORATION
To: MITSUBISHI RAYON CO., LTD.
Reel/Frame 043750/0207 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2009
From: OHMI, TADAHIRO; TAHARA, MINORU; KAWASE, YASUHIRO
To: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY; MITSUBISHI CHEMICAL CORPORATION
Reel/Frame 022907/0345 →