Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
View Patent ↗A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.
1. A semiconductor device comprising a memory element including a recording layer, and a first electrode and a second electrode formed on both surfaces of the recording layer, respectively, the memory element being formed on a semiconductor substrate, wherein
the recording layer is formed of material containing indium in a range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %.
2. The semiconductor device according to claim 1 , wherein the content of germanium in the recording layer is equal to or larger than the content of antimony.
3. The semiconductor device according to claim 1 , wherein a sum of the contents of tellurium and indium in the recording layer is in a range from 62 atomic % to 80 atomic %.
4. The semiconductor device according to claim 1 , wherein the content of antimony in the recording layer is larger than or equal to 5 atomic %.
5. The semiconductor device according to claim 1 , wherein an interface layer is formed between the second electrode and the recording layer.
6. The semiconductor device according to claim 5 , wherein
the interface layer is formed of metal oxide or metal nitride.
7. The semiconductor device according to claim 5 , wherein
the interface layer is formed of tantalum oxide or chromium oxide.
8. The semiconductor device according to claim 1 , wherein,
after the semiconductor device causes the memory element to store information, solder reflow process is performed to the semiconductor device.
9. The semiconductor device according to claim 1 , wherein
mounting of the semiconductor device is performed using lead-free solder.
10. The semiconductor device according to claim 1 , wherein
information is stored in the memory element according to a high-resistance state where an electric resistance value of the recording layer is high and a low-resistance state where the electric resistance value of the recording layer is low.
11. The semiconductor device according to claim 1 , wherein
information is stored in the memory element according to change of atomic arrangement in the recording layer.
12. The semiconductor device according to claim 1 , wherein
the memory element is a phase change memory.
13. A semiconductor device comprising a memory element including a recording layer, and a first electrode and a second electrode formed on both surfaces of the recording layer, respectively, the memory element being formed on a semiconductor substrate, wherein
the recording layer is formed of chalcogenide material having an average composition in a film thickness direction of the recording layer represented by In α Ge X Sb Y Te Z , where 0.20≦α≦0.38, 0.09≦X≦0.28, 0.03≦Y≦0.18, 0.42≦Z≦0.63, and α+X+Y+Z=1.
14. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed on the semiconductor substrate;
a bottom contact electrode buried within an opening formed in the first insulating film;
an interface layer formed on the first insulating film in which the bottom contact electrode is buried;
a recording layer formed of a chalcogenide layer formed on the interface layer; and
an upper contact electrode formed on the recording layer, wherein
the recording layer is formed of material containing indium in a range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %.
15. The semiconductor device according to claim 14 , wherein the content of germanium in the recording layer is larger than or equal to the content of antimony.
16. The semiconductor device according to claim 14 , wherein
the interface layer is formed of metal oxide or metal nitride.
17. The semiconductor device according to claim 14 , wherein
the interface layer is formed of tantalum oxide or chromium oxide.
18. The semiconductor device according to claim 14 , wherein,
after the semiconductor device causes the memory element to store information, solder reflow process is performed to the semiconductor device.
19. The semiconductor device according to claim 14 , wherein
mounting of the semiconductor device is performed using lead-free solder.