Light emitting device with a shunt

1. A light-emitting device, comprising:

a basic layer;

a first electrode layer formed over the basic layer;

an organic light-emitting layer formed over the first electrode;

a second electrode layer formed over the organic light-emitting layer so that the organic light-emitting layer is disposed between the first and second electrode layers; and

at least one shunt element comprising a connection-end connected to one electrode layer of the first and second electrode layers,

wherein the at least one shunt comprises a first shunt element connected to the first electrode layer and a second shunt element connected to the second electrode layer,

wherein the first shunt element comprises a comb-like structure and the second shunt element comprises a line-like structure, and

wherein the first shunt element and the second shunt element jut out beyond the first electrode layer and the second electrode layer.

2. The light-emitting device according to claim 1 , wherein the at least one shunt element has a width ranging from about 50 μm to about 4 mm, and a height ranging from about 20 μm to about 800 μm.

3. The light-emitting device according to claim 1 , wherein the at least one shunt element has an electrical conductivity higher than 30×10 6 S/m.

4. The light-emitting device according to claim 1 , further comprising a metallization element connected with the one electrode layer of the first and second electrode layers and disposed between the one electrode layer and the connection-end of the at least one shunt element.

5. The light-emitting device according to claim 4 , wherein the metallization element has a thickness of 1 nm to 100 nm.