Use of lacunar spinels with tetrahedral aggregates of a transition element of the AM

1. Use of a material belonging to the family of lacunar spinets with tetrahedral aggregates of an AM 4 X 8 transition element as the active material of an electronic data rewritable non-volatile memory, in which:

A includes at least one of the following elements: Ga, Ge, Zn;

M includes at least one of the following elements: V, Nb, Ta, Mo;

X includes at least one of the following elements: S, Se.

2. Use of a material of claim 1 , characterised in that said material is placed between two metal electrodes.

3. Use of a material of claim 2 , characterised in that said material between said two metal electrodes forms a binary information bit.

4. Use of a material as claimed in any of claim 1 , characterised in that:

A=Ga 1-x-y Ge x Zn y , where O≦x+y≦1, with O≦x≦1 and 0≦y≦1;

M=V 1-α-β-γ Nb α Ta β Mo γ , where 0≦α+β+γ≦1, with 0≦α≦1, 0≦β≦1 and 0≦γ≦1;

X=S 1-ν Se ν , where 0≦ν≦1.

5. Use of a material of claim 4 , characterised in that X=O, y=0, β=1, ν=1.

6. Use of a material of claim 4 , characterised in that x=0, y=0, α=0, β=0, γ=0, ν=0.

7. Use of a material of claim 4 , characterised in that x=0, y=0, α=1, ν=1.

8. Use of a material of claim 4 , characterised in that x=0, y=0, α=0, β=0, γ=0, ν=1.

9. Use of a material of claim 4 , characterised in that x=1, α=0, β=0, γ=0, ν=0.