Electroluminescent organic semiconductor element and a method for repair of an electroluminescent organic semiconductor element

1. An electroluminescent organic semiconductor element comprising:

a substrate;

a first electrode arranged above the substrate;

a second electrode wherein the first and/or the second electrode comprises a highly conductive organic sublayer, wherein the electrode comprising the highly conductive organic sublayer further comprises a second conductive sublayer, which has different conductivity than the highly conductive organic sublayer and wherein the highly conductive organic sublayer shows a first type of conduction and the second conductive sublayer shows a second type of conduction that is different from the first type of conduction; and

at least one organic layer arranged between the first electrode and the second electrode, the at least one organic layer comprising a layer that generates light by a recombination of charge carriers.

2. The semiconductor element of claim 1 , wherein the first electrode and/or the second electrode are designed for wide-area delivery of charge carriers of different types to the at least one organic layer.

3. The semiconductor element of claim 1 , wherein the highly conductive organic sublayer comprises at least one material selected from the group consisting of:

polymers;

small molecules;

doped polymers;

doped small molecules;

PEDOT:PSS;

PANI:PSS;

ZnPc/F4-TCNQ;

MeO-TPD/F4-TCNQ; and

BEDT-TTF.

4. The semiconductor element of claim 1 , wherein the highly conductive organic sublayer comprises a polymer doped with a metal or an organic salt or an inorganic salt, or a doped small molecule.

5. The semiconductor element of claim 1 , further comprising a second conductive sublayer, which comprises a metallization layer and which is applied between the highly conductive organic sublayer and the substrate or on the second electrode.

6. The semiconductor element of claim 1 , wherein the substrate and the first electrode are at least partially transparent for one wavelength of the light generated by the at least one organic layer.

7. The semiconductor element of claim 1 , wherein the second electrode is at least partially transparent for one wavelength of the light generated by the at least one organic layer.

8. The semiconductor element of claim 1 , wherein the highly conductive organic sublayer has a conductivity greater than 0.1 S/cm.

9. The semiconductor element of claim 1 , wherein the second conductive sublayer comprises a doped organic material.

10. The semiconductor element of claim 1 , wherein the second conductive sublayer comprises an inorganic material.

11. The semiconductor element of claim 1 , wherein the second conductive sublayer is arranged between the highly conductive organic sublayer and the at least one organic layer.

12. The semiconductor element of claim 1 , wherein at least one electrode comprises a highly conductive bus electrode, which is applied to the highly conductive organic sublayer.

13. The semiconductor element of claim 12 , wherein the bus electrode is a metallic bus electrode having a plurality of conductive segments extending essentially parallel over the highly conductive organic sublayer.

14. The semiconductor element of claim 13 , wherein the essentially parallel conductive segments of the at least one electrode are alternatingly arranged with respect to essentially parallel conductive segments of another electrode.

15. The semiconductor element of claim 12 , wherein the bus electrode is a metallic bus electrode having a plurality of conductive segments that are electrically connected together so as to form a honeycomb structure.

16. The semiconductor element of claim 1 , wherein the first and second electrodes each comprise a highly conductive organic sublayer on each of which a metallic bus electrode is applied.

17. The semiconductor element of claim 1 , wherein the first and second electrodes have essentially a same sheet resistance.

18. A method for repair of the semiconductor element of claim 1 , wherein at least one electrode comprises a metallic bus electrode to improve a lateral voltage drop, the method comprising:

determining a faulty site in the at least one organic layer of the semiconductor element;

identifying conductive segments of the bus electrode in an area of the determined faulty site; and

selectively destroying the identified conductive segments to increase the lateral voltage drop in a region of the faulty site in the at least one organic layer.

19. The method of claim 18 , wherein determining the faulty site comprises visually inspecting the semiconductor element.

20. The method of claim 18 , wherein selectively destroying comprises cutting the identified conductive segments using a laser beam.