Method for producing a control device for operating a radiation-emitting semiconductor component

1. A control method comprising:

determining a temporal profile of a thermal impedance representative of a radiation-emitting semiconductor component;

determining a profile of a pulsed electric operating current that is to be set by using a physical model of the radiation emitting semiconductor component, the determined temporal profile of the thermal impedance being fed to the physical model;

producing a control device such that the profile of the pulsed electric operating current that is predetermined using the physical model set in each case during a pulse duration, wherein the pulsed electric operating current rises during a pulse duration;

using the control device to generate the pulsed electric operating current; and

operating at least one radiation-emitting semiconductor component with the pulsed electric operating current.

2. The control method according to claim 1 , wherein the pulsed electric operating current is generated in such a way that a radiation flux of the at least one radiation-emitting semiconductor component changes only within a predetermined radiation flux tolerance band during the pulse duration.

3. The control method according to claim 1 , wherein generating the pulsed electric operating current comprises:

generating a pulsed electric switching current; and

generating an electric compensation current that rises during the pulse duration and that is superposed on the pulsed electric switching current in order to generate the pulsed electric operating current of the at least one radiation-emitting semiconductor component.

4. The control method according to claim 3 , wherein a profile of the pulsed electric operating current and respectively of the electric compensation current is generated depending on a sum formed using at least one summand of the form

A *(1−exp(− t /tau))

where a time constant tau and a factor A are predetermined in each case.

5. A method for producing a control device for operating at least one radiation-emitting semiconductor component by means of a pulsed electric operating current that rises during a pulse duration, the method comprising:

determining a temporal profile of a thermal impedance representative of the at least one radiation-emitting semiconductor component,

determining a profile of the pulsed electric operating current that is to be set by using a physical model of the radiation-emitting semiconductor component, the determined temporal profile of the thermal impedance being fed to the physical model, and

producing the control device such that the profile of the pulsed electric operating current that is predetermined using the physical model in each case during the pulse duration.

6. The method according to claim 5 , wherein the profile of the electric operating current that is to be set is determined in such a way that a radiation flux of the at least one radiation-emitting semiconductor component changes only within a predetermined radiation flux tolerance band during the pulse duration.

7. The method according to claim 5 , wherein:

the control device generates a pulsed electric switching current,

determining the profile of the electric operating current that is to be set comprises determining a profile to be set of an electric compensation current that rises during the pulse duration and is superposed on the electric switching current in order to generate the electric operating current, and

the profile of the electric compensation current that is to be set is set in each case during the pulse duration.

8. The method according to claim 7 , further comprising determining at least one curve, the at least one curve comprising a voltage-current characteristic curve and/or a radiation flux-current characteristic curve and/or a radiation flux-junction temperature characteristic curve is determined, the at least one curve representative of the at least one radiation-emitting semiconductor component,

wherein the profile to be set of the electric operating current and respectively of the electric compensation current is determined depending on the at least one curve.

9. The method according to claim 8 , wherein the profile to be set of the electric operating current and respectively of the electric compensation current is determined depending on a sum formed using at least one summand of a form

A *(1−exp(− t /tau))

where

a time constant tau depends on the temporal profile of the thermal impedance, and

a factor A depends on the at least one curve.

10. The method according to claim 1 , wherein the at least one radiation-emitting semiconductor component and a controller of the control device are disposed within a common structural unit.