IP Library Granted Patent US 8,611,055
Granted Patent B1
US 8,611,055 · App. 12/534,091 · Granted Dec 17, 2013

Magnetic etch-stop layer for magnetoresistive read heads

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Quick Facts
Patent No.
US 8,611,055
App. No.
12/534,091
Granted
Dec 17, 2013
Kind
B1
Abstract

A method of producing a magnetoresistive read head and a tunneling magnetoresistive read head produced thereby are disclosed. A shield layer is provided. A magnetic etch-stop layer is formed over the shield layer, where the magnetic etch-stop layer comprises a nonmagnetic metal and a soft magnetic material with overall property still being magnetically soft. A sensor stack is formed over the magnetic etch-stop layer. A patterned mask layer is formed over the sensor stack. Material from a portion of the sensor stack not covered by the patterned mask is removed.

Claims (16)

1. A method of producing a magnetoresistive read head, the method comprising:

providing a shield layer;

forming a magnetic etch-stop layer over the shield layer, the magnetic etch-stop layer comprising a nonmagnetic metal and a soft magnetic material;

forming a sensor stack over the magnetic etch-stop layer;

forming a patterned mask layer over the sensor stack; and

removing material from a portion of the sensor stack not covered by the patterned mask.

2. The method of claim 1 , wherein the magnetic etch-stop layer comprises an amorphous magnetic material.

3. The method of claim 1 , further comprising forming a magnetic seed layer between the magnetic etch-stop layer and the sensor stack.

4. The method of claim 3 , wherein the magnetic seed layer comprises a crystalline magnetic material.

5. The method of claim 1 , wherein forming the magnetic etch-stop layer comprises depositing an alloy of the nonmagnetic metal and the soft magnetic material.

6. The method of claim 1 , wherein forming the magnetic etch-stop layer comprises depositing a set of alternating layers of the nonmagnetic metal and the soft magnetic material.

7. The method of claim 1 , wherein the removing comprises performing an etching process.

8. The method of claim 7 , wherein the etching process is stopped after exposing the magnetic etch-stop layer.

9. The method of claim 7 , wherein the etching process comprises a reactive ion etching process.

10. The method of claim 9 , wherein the reactive ion etching process employs CH 3 OH, C 2 H 5 OH, or CO/NH 3 as an etchant gas.

11. The method of claim 1 , wherein the patterned mask layer comprises a hard mask layer.

Assignments (8)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0845 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL (FREMONT), LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2019
From: WESTERN DIGITAL (FREMONT), LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 050450/0582 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 045501/0158 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0845 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038744/0675 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038744/0755 →