Energy transmission device and semiconductor device for energy transmission control
View Patent ↗The present invention includes a voltage clamping circuit 6 for outputting a voltage signal, which has been clamped to a predetermined voltage, from the drain voltage of a switching element 1 , and a turn-on detection circuit 7 for detecting the turn-on timing of the switching element 1 from the voltage signal. Thus it is possible to turn on the switching element 1 at the minimum value of the drain voltage without adding external terminals.
1. An energy transmission device, comprising:
a transformer having a primary winding and a secondary winding;
a switching element connected in series with the primary winding to switch a first DC voltage inputted through the primary winding;
a control circuit for controlling switching of the switching element; and
an output voltage generating section for converting to a second DC voltage an AC voltage generated on the secondary winding by switching control of the control circuit, and supplying power to a load,
wherein the control circuit comprises:
a voltage clamping device for outputting a voltage signal clamped to a clamping voltage when a voltage applied to a DRAIN terminal of the switching element is not lower than the clamping voltage, the clamping voltage being lower than a minimum point of the voltage applied to the DRAIN terminal of the switching element in a period during which a secondary current passes through the secondary winding after the switching element is turned off by the switching control of the control circuit; and
a turn-on detection circuit for detecting, from the voltage signal obtained by the voltage clamping device, a specific voltage of ringing voltage generated after passage of the secondary current is stopped, and controlling a signal for turning on the switching element.
2. The energy transmission device according to claim 1 , wherein the turn-on detection circuit does not detect the specific voltage of the ringing voltage when the voltage applied to the switching element is not lower than the clamping voltage.
3. The energy transmission device according to claim 1 , wherein the turn-on detection circuit sets a detection prohibition period during which the specific voltage of the ringing voltage is not detected, the detection prohibition period starting from turn-off of the switching element and being completed at least before the passage of the secondary current is stopped.
4. The energy transmission device according to claim 3 , wherein the voltage clamping device sets the clamping voltage lower than the minimum point of the voltage applied to the switching element in a period from when the detection prohibition period has elapsed to when the ringing voltage is generated.
5. The energy transmission device according to claim 1 , wherein the voltage clamping device outputs a voltage signal clamped to a voltage lower than a withstand voltage of a circuit element constituting the turn-on detection circuit.
6. The energy transmission device according to claim 1 , wherein the voltage clamping device sets the clamping voltage higher than a value at which the turn-on detection circuit detects the ringing voltage.
7. The energy transmission device according to claim 1 , wherein the voltage clamping device has a junction field effect transistor which is fed with the voltage applied to the switching element, is pinched off at the clamping voltage, and outputs the voltage signal.
8. The energy transmission device according to claim 1 , wherein the voltage clamping device outputs the voltage signal according to the voltage applied to the switching element, and when the voltage applied to the switching element is not lower than the clamping voltage, the voltage clamping device outputs the voltage signal after stepping down through a voltage divider circuit a voltage of the voltage signal having been clamped to the clamping voltage.
9. The energy transmission device according to claim 1 , wherein the specific voltage is a minimum voltage of the ringing voltage.
10. The energy transmission device according to claim 1 , wherein the turn-on detection circuit detects a period from when the switching element is turned off to when the passage of the secondary current is stopped, and controls the signal for turning on the switching element.
11. A semiconductor device for energy transmission control constituting the energy transmission device according to claim 1 , wherein the switching element and the control circuit are formed on a same substrate as a semiconductor IC.