IP Library › Granted Patent US 7,839,001
Granted Patent B2
US 7,839,001 · App. 12/536,082 · Granted Nov 23, 2010

Methods for making substrates and substrates formed therefrom

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Quick Facts
Patent No.
US 7,839,001
App. No.
12/536,082
Granted
Nov 23, 2010
Kind
B2
Abstract

A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

Claims (19)

1. A substrate comprising:

a receiving support having a thermal expansion coefficient;

a seed layer having a thermal expansion coefficient, wherein the seed layer is operably connected to the receiving support, and wherein the receiving support and the seed layer have identical chemical compositions; and

a useful layer having a thermal expansion coefficient, the useful layer being operably connected to the seed layer;

wherein the thermal expansion coefficient of the receiving support is greater than or equal to the thermal expansion coefficient of the useful layer, and

wherein the thermal expansion coefficient of the seed layer is about equal to the thermal expansion coefficient of the receiving support so that the seed layer and the receiving support expand in substantially the same way to avoid stressing or deforming the seed layer.

2. The substrate of claim 1 , wherein the seed layer is made of a material for which the thermal expansion coefficient is from 1.1 to 1.2 times the thermal expansion coefficient of the receiving support.

3. The substrate of claim 1 , wherein the useful layer is made of a material for which the thermal expansion coefficient is from 1.2 to 1.3 times the thermal expansion coefficient of the receiving support.

4. The substrate of claim 1 , wherein the seed layer and the receiving support are made of the same material selected from the group consisting of silicon, germanium, silicon carbide, GaN, AlN and sapphire.

5. The substrate of claim 1 , further comprising a supporting substrate comprising a material selected from the group consisting of semiconductors, plastic, glass and metal.

6. The substrate of claim 5 , further comprising a structure buried in the bonding layer.

7. The substrate of claim 1 , further comprising a bonding layer connecting the seed layer and the receiving support, wherein the bonding layer is comprised of a material selected from the group consisting of insulating layers, organic layers, metal interfaces and sealing layers.

8. The substrate of claim 7 , wherein the bonding layer comprises at least one of silicon oxide or silicon nitride.

9. The substrate of claim 1 , wherein the seed layer and the useful layer has a thickness of at least 50 μm.

10. The substrate of claim 1 , wherein the seed layer and the receiving support are made of the same material selected from the group consisting of germanium, silicon carbide, GaN, AlN and sapphire.

11. The substrate of claim 1 , further comprising

a supporting substrate comprising a material selected from the group consisting of semiconductors, plastic, glass and metal; and

a bonding layer connecting the supporting substrate and the useful layer.

12. The substrate of claim 7 , wherein the bonding layer comprises an oxide.