CPP magnetoresistive head

1. A CPP magnetoresistive head including:

a magnetoresistive film comprising:

a free layer above a non-magnetic intermediate layer; and

a fixed layer below the non-magnetic intermediate layer,

wherein the magnetoresistive film is between a lower magnetic shield layer and an upper magnetic shield layer; and

a domain control film disposed by way of an insulating film on each side of the magnetoresistive film, wherein a sense current flows through the magnetoresistive film between the upper magnetic shield layer and the lower magnetic shield layer; and

a high heat conductivity layer disposed between the upper magnetic shield layer and the magnetoresistive layer or between the lower magnetic shield layer and the magnetoresistive film; and

a heat dissipation layer having a high heat conductivity and a low linear expansion coefficient, the heat dissipation layer being disposed at the back in a device height direction of the magnetoresistive film and on each side of the domain control film, wherein the heat dissipation layer is disposed between the high heat conductivity layer and the upper magnetic shield layer or the lower magnetic shield layer.

2. The CPP magnetoresistive head according to claim 1 , wherein at least one high heat conductivity layer is disposed between the upper magnetic shield layer and the magnetoresistive film and wherein at least one high heat conductivity layer is disposed between the lower magnetic shield layer and the magnetoresistive film.

3. The CPP magnetoresistive head according to claim 1 , wherein a thickness of the high heat conductivity layer is varied in the device height direction.

4. The CPP magnetoresistive head according to claim 3 , wherein the thickness of the high heat conductivity layer increases in the device height direction.

5. The CPP magnetoresistive head according to claim 1 , wherein the non-magnetic intermediate layer has a conductive property.

6. The CPP magnetoresistive head according to claim 1 , wherein the non-magnetic intermediate layer has an insulative property.

7. The CPP magnetoresistive head according to claim 1 , wherein the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient comprises AlN or DLC.

8. The CPP magnetoresistive head according to claim 1 , wherein the high heat conductivity layer comprises at least one element selected from the group consisting of Al, Au, Be, Co, Ir, Mg, Mo, W, Rh, Ru, and Cr.

9. The CPP magnetoresistive head according to claim 8 , wherein the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient comprises AlN or DLC.

10. The CPP magnetoresistive head according to claim 1 , wherein an insulating film is disposed between the magnetoresistive film and the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient.

11. The CPP magnetoresistive head according to claim 10 , wherein the insulating film comprises Al 2 O 3 .

12. The CPP magnetoresistive head according to claim 10 , wherein the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient comprises Si or SiC.

13. The CPP magnetoresistive head according to claim 12 , wherein the high heat conductivity layer comprises at least one element selected from the group consisting of Al, Au, Be, Co, Ir, Mg, Mo, W, Rh, Ru, and Cr.

14. A CPP magnetoresistive head comprising:

a read device including a magnetoresistive film having:

a free layer above a non-magnetic intermediate layer; and

a fixed layer below the non-magnetic intermediate layer; and

wherein the magnetoresistive head is between a lower magnetic shield layer and an upper magnetic shield layer; and

a domain control film disposed by way of an insulating film on each side of the magnetoresistive film, wherein a sense current flows through the magnetoresistive film between the upper magnetic shield layer and the lower magnetic shield layer; and

a high heat conductivity layer disposed between the upper magnetic shield layer and the magnetoresistive film or between the lower magnetic shield layer and the magnetoresistive film; and

a heat dissipation layer having a high heat conductivity and a low linear expansion coefficient, the heat dissipation layer being disposed at the back in a device height direction of the magnetoresistive film and on each side of the domain control film, wherein the heat dissipation layer is disposed between the high heat conductivity layer and the upper magnetic shield layer or the lower magnetic shield layer; and

a write device disposed adjacent to the read device.

15. The CPP magnetoresistive head according to claim 14 , wherein the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient comprises AlN or DLC.

16. The CPP magnetoresistive head according to claim 15 , wherein the high heat conductivity layer comprises at least one element selected from the group consisting of Al, Au, Be, Co, Ir, Mg, Mo, W, Rh, Ru, and Cr.

17. The CPP magnetoresistive head according to claim 14 , wherein an insulating film is provided between the magnetoresistive film and the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient.

18. The CPP magnetoresistive head according to claim 17 , wherein the heat dissipation layer having the high heat conductivity and the low linear expansion coefficient comprises Si or SiC.

19. The CPP magnetoresistive head according to claim 18 , wherein the high heat conductivity layer comprises at least one element selected from the group consisting of Al, Au, Be, Co, Ir, Mg, Mo, W, Rh, Ru, and Cr.