IP Library Granted Patent US 7,771,904
Granted Patent B2
US 7,771,904 · App. 12/536,743 · Granted Aug 10, 2010

Photomask, and method and apparatus for producing the same

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Quick Facts
Patent No.
US 7,771,904
App. No.
12/536,743
Granted
Aug 10, 2010
Kind
B2
Abstract

A shading area having a transmissivity in the range of 0 to 2% is formed at the center of a clear defect in a wiring pattern of a half tone mask. Semitransparent areas having a transmissivity in the range of 10 to 25% are formed, adjacently to shading area, in areas extending from the inside of the edge of an imaginary pattern having no defect to the outside of the edge. In this way, in the correction of the defect in the half tone mask, the working accuracy tolerable margin of the correction portion of the defect can be made large.

Claims (4)

1. A method for producing a photomask comprising a transparent substrate and semitransparent film or shading film provided on said transparent substrate, comprising the steps of:

removing an opaque defect portion and a vicinity thereof when the opaque defect portion is formed, wherein said opaque defect portion is a portion projected from an outer periphery of a complete pattern in which said semitransparent film or shading film is completely well formed;

forming a shading portion having a transmissivity of 0 to 2% or 2 to 6% in the removed opaque defect portion and the removed vicinity thereof on said transparent substrate; and

forming a semitransparent portion having a transmissivity larger than that of said shading portion at the peripheral portion of the shading portion.