SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This invention offers a semiconductor device to measure a luminance for the visible wavelength range of light components and its manufacturing method which reduce its manufacturing cost. A first light-receiving element and a second light-receiving element are formed in a semiconductor substrate. Then, there is formed an arithmetic circuit that calculates a difference between a value of an electric current corresponding to an amount of light detected by the first light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light) and a value of an electric current corresponding to an amount of light detected by the second light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light). Next, a first green pass filter permeable only to light in a green wavelength range and an infrared wavelength range is formed to cover the first light-receiving element, while a second green pass filter similar to the first green filter is formed to cover the second light-receiving element. In addition, a red pass filter permeable only to light in a red wavelength range and the infrared wavelength range is formed to cover the second light-receiving element.
1 . A semiconductor device comprising:
a semiconductor substrate;
a first light-receiving element and a second light-receiving element formed in the semiconductor substrate;
a first optical color resist covering the first and second light-receiving elements, the first optical color resist allowing light transmission only in a green wavelength range and an infrared wavelength range;
a second optical color resist covering only the second light-receiving element, the second optical color resist allowing light transmission only in a red wavelength range and the infrared wavelength range; and
an arithmetic circuit calculating a difference between a value of an electric output corresponding to an amount of light detected by the first light-receiving element and a value of an electric output corresponding to an amount of light detected by the second light-receiving element.
2 . The semiconductor device of claim 1 , further comprising a supporter bonded to the semiconductor substrate through an adhesive layer so that the supporter covers the first and second light-receiving elements.
3 . The semiconductor device of claim 1 , wherein the green wavelength range comprises a wavelength range between 500 nm and 600 nm, the red wavelength range comprises a wavelength range between 600 nm and 700 nm, and the infrared wavelength range comprises a wavelength range between 700 nm and 1200 nm.
4 . The semiconductor device of claim 2 , wherein the green wavelength range comprises a wavelength range between 500 nm and 600 nm, the red wavelength range comprises a wavelength range between 600 nm and 700 nm, and the infrared wavelength range comprises a wavelength range between 700 nm and 1200 nm.
5 . A semiconductor device comprising:
a semiconductor substrate;
a first light-receiving element and a second light-receiving element formed in the semiconductor substrate;
a supporter bonded to the semiconductor substrate through an adhesive layer so that the supporter covers the first and second light-receiving elements;
a first optical color resist formed on the supporter so as to cover the first and second light-receiving elements, the first optical color resist allowing light transmission only in a green wavelength range and an infrared wavelength range;
a second optical color resist formed on the semiconductor substrate so as to cover only the second light-receiving element, the second optical color resist allowing light transmission only in a red wavelength range and the infrared wavelength range; and
an arithmetic circuit calculating a difference between a value of an electric output corresponding to an amount of light detected by the first light-receiving element and a value of an electric output corresponding to an amount of light detected by the second light-receiving element.
6 . The semiconductor device of claim 5 , wherein the green wavelength range comprises a wavelength range between 500 nm and 600 nm, the red wavelength range comprises a wavelength range between 600 nm and 700 nm, and the infrared wavelength range comprises a wavelength range between 700 nm and 1200 nm.
7 . A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate;
forming a first light-receiving element and a second light-receiving element in the semiconductor substrate;
forming in the semiconductor substrate an arithmetic circuit calculating a difference between a value of an electric output corresponding to an amount of light detected by the first light-receiving element and a value of an electric output corresponding to an amount of light detected by the second light-receiving element;
forming a first optical color resist so as to cover the first and second light-receiving elements, the first optical color resist allowing light transmission only in a green wavelength range and an infrared wavelength range; and
forming a second optical color resist so as to cover only the second light-receiving element, the second optical color resist allowing light transmission only in a red wavelength range and the infrared wavelength range.
8 . The method of claim 7 , further comprising bonding a supporter to the semiconductor substrate through an adhesive layer so that the supporter covers the first and second light-receiving elements.
9 . The method of claim 7 , wherein the green wavelength range comprises a wavelength range between 500 nm and 600 nm, the red wavelength range comprises a wavelength range between 600 nm and 700 nm, and the infrared wavelength range comprises a wavelength range between 700 nm and 1200 nm.
10 . The method of claim 8 , wherein the green wavelength range comprises a wavelength range between 500 nm and 600 nm, the red wavelength range comprises a wavelength range between 600 nm and 700 nm, and the infrared wavelength range comprises a wavelength range between 700 nm and 1200 mm.
11 . A method of manufacturing a semiconductor device comprising:
providing a supporter comprising a first optical color resist formed on the supporter, the first optical color resist allowing light transmission only in a green wavelength range and an infrared wavelength range;
providing a semiconductor substrate;
forming a first light-receiving element and a second light-receiving element in the semiconductor substrate;
forming in the semiconductor substrate an arithmetic circuit calculating a difference between a value of an electric output corresponding to an amount of light detected by the first light-receiving element and a value of an electric output corresponding to an amount of light detected by the second light-receiving element;
forming a second optical color resist on the semiconductor substrate so as to cover only the second light-receiving element, the second optical color resist allowing light transmission only in a red wavelength range and the infrared wavelength range; and
bonding the supporter to the semiconductor substrate through an adhesive layer so that the first optical color resist covers the first and second light-receiving elements.
12 . The method of claim 11 , wherein the green wavelength range comprises a wavelength range between 500 nm and 600 nm, the red wavelength range comprises a wavelength range between 600 nm and 700 nm, and the infrared wavelength range comprises a wavelength range between 700 nm and 1200 nm.