IP Library Granted Patent US 8,475,591
Granted Patent B2
US 8,475,591 · App. 12/539,125 · Granted Jul 2, 2013

Method of controlling a thickness of a sheet formed from a melt

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Quick Facts
Patent No.
US 8,475,591
App. No.
12/539,125
Granted
Jul 2, 2013
Kind
B2
Abstract

A method and apparatus for forming a sheet are disclosed. A melt is cooled and a sheet is formed on the melt. This sheet has a first thickness. The sheet is then thinned from the first thickness to a second thickness using, for example, a heater or the melt. The cooling may be configured to allow solutes to be trapped in a region of the sheet and this particular sheet may be thinned and the solutes removed. The melt may be, for example, silicon, silicon and germanium, gallium, or gallium nitride.

Claims (21)

1. A method of forming a sheet from a material comprising at least one of silicon, germanium, or gallium, comprising:

heating said material to form a melt;

introducing said melt into a channel in a vessel configured to contain said melt;

forming a sheet of said material on a surface of said melt by controllably cooling said melt in a first region of said channel, said sheet having a first thickness after said forming;

horizontally transporting said sheet to a second region of said channel downstream of said first region with said sheet floating on said surface of said melt, wherein a temperature of said melt and a speed of said transporting are controlled;

thinning said sheet from said first thickness to a second thickness while said sheet is on said surface of said melt in said second region, wherein said second thickness is smaller than said first thickness and wherein said thinning occurs after said forming by controllably heating said melt;

and

separating said sheet from said melt after said thinning.

2. The method of claim 1 , further comprising smoothing a surface of said sheet during said thinning using a heat flux from said melt.

3. The method of claim 1 , wherein said first thickness is between 50 μm and 100 μm and said second thickness is between 150 μm and 200 μm.

4. The method of claim 2 , wherein said thinning occurs at a rate of at least 1 μm/s.

5. The method of claim 3 , wherein said first thickness is 200 μm and said second thickness is 100 μm.

6. The method of claim 1 , wherein said controllable cooling comprises controllable radiative cooling.

7. The method of claim 6 , wherein said controllable radiative cooling comprises using a cooling plate.

8. The method of claim 7 , wherein said controllable radiative cooling comprises controlling a temperature of said cooling plate to affect said first thickness.

9. The method of claim 7 , wherein a temperature of said cooling plate is different from said temperature of said melt by 300 K.

10. The method of claim 1 , wherein said controlling said temperature of said melt comprises at least one of controlling a temperature of a heater used for said controllable heating or controlling a temperature of said vessel containing said melt.

11. The method of claim 1 , wherein controlling said speed of said transporting is to affect at least one of said first thickness or said second thickness of said sheet.

12. The method of claim 1 , wherein a temperature of said vessel is 2 K higher than a freezing temperature of said melt.

13. The method of claim 1 , wherein said separating comprises using a spillway.

14. The method of claim 1 , wherein said separating comprises pulling said sheet from said melt using a seed.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2025
From: BLUE ORIGIN, LLC
To: BLUE ORIGIN MANUFACTURING, LLC
Reel/Frame 070585/0314 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2024
From: LEADING EDGE EQUIPMENT TECHNOLOGIES, INC.
To: BLUE ORIGIN, LLC
Reel/Frame 068601/0041 →
CHANGE OF NAME Recorded Dec 1, 2021
From: LEADING EDGE CRYSTAL TECHNOLOGIES, INC.
To: LEADING EDGE EQUIPMENT TECHNOLOGIES, INC.
Reel/Frame 058292/0241 →
ACQUISITION Recorded Jan 15, 2020
From: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
To: APPLIED MATERIALS, INC.
Reel/Frame 051973/0106 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2019
From: APPLIED MATERIALS, INC.
To: LEADING EDGE CRYSTAL TECHNOLOGIES, INC.
Reel/Frame 051247/0716 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2009
From: KELLERMAN, PETER L.; CARLSON, FREDERICK; SINCLAIR, FRANK
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 023350/0905 →