Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof

1. An optical apparatus, comprising:

a semiconductor substrate;

a semiconductor optical device integrally formed on the substrate, which semiconductor optical device defines a device optical propagation direction and has an etched device end face that is non-normal with respect to the device optical propagation direction; and

a low-index planar optical waveguide integrally formed on the semiconductor substrate at the etched device end face, which optical waveguide defines a waveguide optical propagation direction and is end-coupled at its proximal end to the optical device through the etched device end face, the optical device and the integrally-formed waveguide being arranged so that the respective optical propagation directions are non-collinear and refraction at the device end-face end-couples optical signals propagating in the optical device and the optical waveguide along the respective optical propagation directions,

wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical structure;

the etched device end face includes an outwardly protruding portion extending along the substrate from a bottom portion of the device end face beneath a proximal portion of the integrally-formed end-coupled waveguide; and

at least one layer of the end-coupled waveguide decreases in thickness toward the etched device end face, the outwardly protruding portion of the etched device end face and the decreasing layer thickness together yielding a desired layer surface profile for at least one layer of the integrally-formed end-coupled waveguide.

2. The apparatus of claim 1 wherein the integrally-formed waveguide comprises:

a waveguide core comprising silicon nitride or silicon oxynitride and arranged for end-coupling with the semiconductor optical device; and

cladding comprising silica or doped silica and having a refractive index less than that of the waveguide core, the cladding being disposed between the waveguide core and the substrate and over the waveguide core.

3. The apparatus of claim 2 wherein the waveguide core tapers toward a distal end of the integrally-formed waveguide.

4. The apparatus of claim 2 wherein the waveguide core is between about 50 nm and about 200 nm thick and between about 1 μm and about 4 μm wide at a proximal end of the integrally-formed waveguide and tapers in width toward the distal end of the integrally-formed waveguide.

5. The apparatus of claim 1 wherein the semiconductor optical device comprises at least one III-V semiconductor material.

6. The apparatus of claim 1 wherein the semiconductor optical device comprises at least one laser, optical modulator, optical attenuator, optical amplifier, photodetector, optical filter, optical splitter or combiner, optical add/drop filter, optical slicer or interleaver, or optical phase shifter.

7. A method for fabricating an optical apparatus, the method comprising:

integrally forming a low-index planar optical waveguide on a semiconductor substrate at an etched end face of a semiconductor optical device integrally formed on the semiconductor substrate;

etching the device end face so as to leave an outwardly protruding portion extending along the substrate from a bottom portion of the etched device end face beneath a proximal portion of the integrally-formed waveguide; and

forming at least one layer of the end-coupled waveguide so that it decreases in thickness toward the etched device end face, the outwardly protruding portion of the etched device end face and the decreasing layer thickness together yielding a desired layer surface profile for at least one layer of the integrally-formed end-coupled waveguide,

wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical apparatus;

the integrally-formed waveguide is end-coupled at its proximal end to the optical device through the etched device end face;

the semiconductor optical device and the integrally-formed waveguide define respective optical propagation directions that are non-collinear;

the etched device end face is non-normal with respect to the device optical propagation direction; and

refraction at the device end-face end-couples optical signals propagating in the optical device and the optical waveguide along the respective optical propagation directions.

8. The method of claim 7 wherein the etched device end face is formed by ion etching.

9. The method of claim 7 wherein forming the integrally-formed waveguide comprises:

depositing a waveguide core comprising silicon nitride or silicon oxynitride and arranged for end-coupling with the semiconductor optical device; and

depositing cladding comprising silica or doped silica and having a refractive index less than that of the waveguide core, the cladding being disposed between the waveguide core and the substrate and over the waveguide core.

10. The method of claim 9 wherein the core or the cladding is deposited by chemical vapor deposition.

11. A method comprising transmitting an optical signal between a semiconductor optical device, integrally formed on a semiconductor substrate, and a low-index end-coupled planar optical waveguide, integrally-formed on the semiconductor substrate at an etched device end face, the integrally-formed waveguide being end-coupled at its proximal end to the optical device through the etched device end face, wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical apparatus;

the semiconductor optical device and the integrally-formed waveguide define respective optical propagation directions that are non-collinear;

the etched device end face is non-normal with respect to the device optical propagation direction;

refraction at the device end-face end-couples the optical signal propagating in the optical device and the optical waveguide along the respective optical propagation directions;

the etched device end face includes an outwardly protruding portion extending along the substrate from a bottom portion of the etched device end face beneath a proximal portion of the integrally-formed end-coupled waveguide; and

at least one layer of the end-coupled waveguide decreases in thickness toward the etched device end face, the outwardly protruding portion of the etched device end face and the decreasing layer thickness together yielding a desired layer surface profile for at least one layer of the integrally-formed end-coupled waveguide.

12. An optical apparatus, comprising:

a semiconductor substrate;

a semiconductor optical device integrally formed on the substrate, which semiconductor optical device defines a device optical propagation direction and has a device end face that is non-normal with respect to the device optical propagation direction;

a low-index planar optical waveguide integrally formed on the semiconductor substrate at the device end face, which optical waveguide defines a waveguide optical propagation direction and is end-coupled at its proximal end to the optical device through the device end face, the optical device and the integrally-formed waveguide being arranged so that the respective optical propagation directions are non-collinear and refraction at the device end-face end-couples optical signals propagating in the optical device and the optical waveguide along the respective optical propagation directions; and

a reflective optical coating between the substrate and at least a proximal portion of the integrally-formed waveguide,

wherein the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical structure.

13. The apparatus of claim 12 wherein the integrally-formed waveguide comprises:

a waveguide core comprising silicon nitride or silicon oxynitride and arranged for end-coupling with the semiconductor optical device; and

cladding comprising silica or doped silica and having a refractive index less than that of the waveguide core, the cladding being disposed between the waveguide core and the substrate and over the waveguide core.

14. The apparatus of claim 13 wherein the waveguide core tapers toward a distal end of the integrally-formed waveguide.

15. The apparatus of claim 13 wherein the waveguide core is between about 50 nm and about 200 nm thick and between about 1 μm and about 4 μm wide at a proximal end of the integrally-formed waveguide and tapers in width toward the distal end of the integrally-formed waveguide.

16. The apparatus of claim 12 wherein the semiconductor optical device comprises at least one III-V semiconductor material.

17. The apparatus of claim 12 wherein the semiconductor optical device comprises at least one laser, optical modulator, optical attenuator, optical amplifier, photodetector, optical filter, optical splitter or combiner, optical add/drop filter, optical slicer or interleaver, or optical phase shifter.

18. A method for fabricating an optical apparatus, the method comprising:

integrally forming a low-index planar optical waveguide on a semiconductor substrate at an end face of a semiconductor optical device integrally formed on the semiconductor substrate; and

forming a reflective optical coating between the substrate and at least a proximal portion of the integrally-formed waveguide,

wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical apparatus;

the integrally-formed waveguide is end-coupled at its proximal end to the optical device through the device end face;

the semiconductor optical device and the integrally-formed waveguide define respective optical propagation directions that are non-collinear;

the device end face is non-normal with respect to the device optical propagation direction; and

refraction at the device end-face end-couples optical signals propagating in the optical device and the optical waveguide along the respective optical propagation directions.

19. The method of claim 18 wherein the device end face is formed by ion etching.

20. The method of claim 18 wherein forming the integrally-formed waveguide comprises:

depositing a waveguide core comprising silicon nitride or silicon oxynitride and arranged for end-coupling with the semiconductor optical device; and

depositing cladding comprising silica or doped silica and having a refractive index less than that of the waveguide core, the cladding being disposed between the waveguide core and the substrate and over the waveguide core.

21. The method of claim 20 wherein the core or the cladding is deposited by chemical vapor deposition.

22. A method comprising transmitting an optical signal between a semiconductor optical device, integrally formed on a semiconductor substrate, and a low-index end-coupled planar optical waveguide, integrally-formed on the semiconductor substrate at a device end face, the integrally-formed waveguide being end-coupled at its proximal end to the optical device through the device end face, wherein

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical apparatus;

the semiconductor optical device and the integrally-formed waveguide define respective optical propagation directions that are non-collinear;

the etched device end face is non-normal with respect to the device optical propagation direction;

refraction at the device end-face end-couples the optical signal propagating in the optical device and the optical waveguide along the respective optical propagation directions;

a reflective optical coating is arranged between the substrate and at least a proximal portion of the integrally-formed waveguide.

23. An optical apparatus, comprising:

a semiconductor substrate;

a semiconductor optical device integrally formed on the substrate, which semiconductor optical device defines a device optical propagation direction and has an etched device end face that is non-normal with respect to the device optical propagation direction; and

a low-index planar optical waveguide integrally formed on the semiconductor substrate at the etched device end face, which optical waveguide defines a waveguide optical propagation direction and is end-coupled at its proximal end to the optical device through the etched device end face, the optical device and the integrally-formed waveguide being arranged so that the respective optical propagation directions are non-collinear and refraction at the device end-face end-couples optical signals propagating in the optical device and the optical waveguide along the respective optical propagation directions,

wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical structure; and

at least a portion of the etched device end face is curved in the horizontal dimension.

24. The apparatus of claim 23 wherein the integrally-formed waveguide comprises:

a waveguide core comprising silicon nitride or silicon oxynitride and arranged for end-coupling with the semiconductor optical device; and

cladding comprising silica or doped silica and having a refractive index less than that of the waveguide core, the cladding being disposed between the waveguide core and the substrate and over the waveguide core.

25. The apparatus of claim 24 wherein the waveguide core tapers toward a distal end of the integrally-formed waveguide.

26. The apparatus of claim 24 wherein the waveguide core is between about 50 nm and about 200 nm thick and between about 1 μm and about 4 μm wide at a proximal end of the integrally-formed waveguide and tapers in width toward the distal end of the integrally-formed waveguide.

27. The apparatus of claim 23 wherein the semiconductor optical device comprises at least one III-V semiconductor material.

28. The apparatus of claim 23 wherein the curved portion of the device end face exhibits increased optical end-coupling between the optical device and the end-coupled waveguide, relative to a substantially flat device end face.

29. The apparatus of claim 23 wherein the curved portion of the laser end face is limited in transverse extent so as to suppress higher-order laser optical modes.

30. The apparatus of claim 23 wherein the semiconductor optical device comprises at least one laser, optical modulator, optical attenuator, optical amplifier, photodetector, optical filter, optical splitter or combiner, optical add/drop filter, optical slicer or interleaver, or optical phase shifter.

31. A method for fabricating an optical apparatus, the method comprising integrally forming a low-index planar optical waveguide on a semiconductor substrate at an etched end face of a semiconductor optical device integrally formed on the semiconductor substrate, wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical apparatus;

the integrally-formed waveguide is end-coupled at its proximal end to the optical device through the etched device end face;

the semiconductor optical device and the integrally-formed waveguide define respective optical propagation directions that are non-collinear;

at least a portion of the etched device end face is curved in the horizontal dimension;

the etched device end face is non-normal with respect to the device optical propagation direction; and

refraction at the device end-face end-couples optical signals propagating in the optical device and the optical waveguide along the respective optical propagation directions.

32. The method of claim 31 wherein the etched device end face is formed by ion etching.

33. The method of claim 31 wherein forming the integrally-formed waveguide comprises:

depositing a waveguide core comprising silicon nitride or silicon oxynitride and arranged for end-coupling with the semiconductor optical device; and

depositing cladding comprising silica or doped silica and having a refractive index less than that of the waveguide core, the cladding being disposed between the waveguide core and the substrate and over the waveguide core.

34. The method of claim 33 wherein the core or the cladding is deposited by chemical vapor deposition.

35. A method comprising transmitting an optical signal between a semiconductor optical device, integrally formed on a semiconductor substrate, and a low-index end-coupled planar optical waveguide, integrally-formed on the semiconductor substrate at an etched device end face, the integrally-formed waveguide being end-coupled at its proximal end to the optical device through the etched device end face, wherein:

the semiconductor substrate, the semiconductor optical device, and the low-index planar optical waveguide together form a single monolithically integrated optical apparatus;

the semiconductor optical device and the integrally-formed waveguide define respective optical propagation directions that are non-collinear;

at least a portion of the etched device end face is curved in the horizontal dimension;

the etched device end face is non-normal with respect to the device optical propagation direction; and

refraction at the device end-face end-couples the optical signal propagating in the optical device and the optical waveguide along the respective optical propagation directions.