Method of forming an ink supply channel
View Patent ↗A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.
1. A method of forming an ink supply channel for an inkjet printhead, said method comprising the steps of:
(i) providing a wafer having a frontside and a backside;
(ii) etching a plurality of frontside trenches into said frontside;
(iii) filling each of the trenches with a photoresist plug;
(iv) forming nozzle structures on the frontside using MEMS fabrication processes;
(v) etching at least one backside trench from said backside, each backside trench meeting with one or more of said plugs;
(vi) removing a portion of each photoresist plug via each backside trench by subjecting said backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench;
(vii) modifying the exposed sidewall features; and
(viii) removing the photoresist plugs to form at least one ink supply channel, said ink supply channel connecting said backside to said frontside,
wherein the exposed sidewall features are modified by argon ion milling.
2. The method of claim 1 , wherein the exposed sidewall features include a circumferential rim around at least a part of the photoresist plug, the circumferential rim being exposed by removing a portion of each plug.
3. The method of claim 1 , wherein the biased oxygen plasma etch removes a portion having a depth of 1 to 15 microns from an exposed surface of the photoresist plug.
4. The method of claim 1 , wherein each ink supply channel has a depth in the range of 100 to 300 microns.
5. The method of claim 1 , wherein ink supply channel sidewalls are concomitantly hydrophilized by the biased oxygen plasma etch.
6. The process claim 5 , wherein concomitant hydrophilization includes removal of a polymeric layer from the trench sidewalls.
7. The method of claim 1 , wherein the argon ion milling smoothes and/or rounds the exposed sidewall features.
8. The method of claim 7 , wherein the argon ion milling is performed in a plasma etching reactor.
9. The method of claim 8 , wherein the plasma etching reactor has a bias power in the range of 10 to 100 W.
10. The method of claim 9 , wherein the plasma etching reactor has a chamber pressure in the range of 20 to 140 mTorr.