Semiconductor device
After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W into the contact hole. Next, a ferroelectric capacitor, a second interlayer insulating film, and the like are formed. Thereafter, a contact hole extending from the upper surface of the interlayer insulating film and reaching the first plug is formed. Then, the contact hole is filled with W to form a second plug. With this, even when misalignment occurs, the interlayer insulating film is prevented from being etched.
1. A semiconductor device comprising:
a semiconductor substrate;
a transistor formed in the semiconductor substrate;
a first insulating film formed on the semiconductor substrate to cover the transistor;
an etching stopper film formed on the first insulating film;
a first plug formed by filling a conductive material into a contact hole extending from an upper surface of the etching stopper film and reaching an impurity region constituting the transistor;
a SiON film formed on the etching stopper film;
a hydrogen barrier film formed over the SiON film;
a ferroelectric capacitor formed on the hydrogen barrier film;
a second insulating film formed on the hydrogen barrier film to cover the ferroelectric capacitor; and
a second plug formed by filling a conductive material into a contact hole extending from an upper surface of the second insulating film and reaching the first plug.
2. The semiconductor device according to claim 1 , wherein a metal silicide layer is formed on the impurity region.
3. The semiconductor device according to claim 1 , wherein the metal silicide layer is selected from cobalt silicide or titanium silicide.
4. The semiconductor device according to claim 1 , wherein the first plug reaches the metal silicide layer.
5. The semiconductor device according to claim 1 , wherein the etching stopper film has a thickness of 20 nm to 150 nm.
6. The semiconductor device according to claim 5 , wherein the etching stopper film is formed of silicon oxynitride or silicon nitride.
7. The semiconductor device according to claim 1 , wherein the etching stopper film is formed of a metal oxide.
8. The semiconductor device according to claim 7 , wherein the etching stopper film has a thickness equal to or less than 100 nm.
9. The semiconductor device according to claim 1 , wherein the ferroelectric capacitor has a lower electrode, a ferroelectric film and an upper electrode comprised of a first and second IrO 2 film stack.