Piezoelectric device, angular velocity sensor, electronic apparatus, and production method of a piezoelectric device
View Patent ↗A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb 1+X (Zr Y Ti 1−Y )O 3+X (0≦X≦0.3, 0≦Y≦0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.
1. A piezoelectric device comprising:
a substrate;
a first electrode film formed on the substrate;
a piezoelectric film represented by Pb 1+X (Zr Y Ti 1−Y )O 3+X (0≦X≦0.3, 0≦Y≦0.55) whose peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less; and
a second electrode film laminated on the piezoelectric film.
2. The piezoelectric device according to claim 1 ,
wherein the perovskite phase has an orientation rate of 60% or more in a (100)/(001) direction.
3. The piezoelectric device according to claim 1 ,
wherein the piezoelectric film is represented by Pb 1+X (Zr Y Ti 1−Y )O 3+X (0≦X≦0.3, 0.4≦Y≦0.55).
4. The piezoelectric device according to claim 1 ,
wherein the piezoelectric film is subjected to a heat treatment at a temperature of 600° C. or more and 900° C. or less.
5. The piezoelectric device according to claim 4 ,
wherein a rate of temperature rise in the heat treatment is 5° C./sec or more.
6. The piezoelectric device according to claim 1 ,
wherein the substrate is subjected to a heat treatment at a temperature of 400° C. or more and 600° C. or less during deposition of the piezoelectric film.
7. The piezoelectric device according to claim 1 ,
wherein the piezoelectric film is constituted of a sputter film.
8. An angular velocity sensor comprising:
a substrate;
a first electrode film formed on the substrate;
a piezoelectric film represented by Pb 1+X (Zr Y Ti 1−Y )O 3+X (0≦X≦0.3, 0≦Y≦0.55) whose peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less; and
a second electrode film laminated on the piezoelectric film.
9. An electronic apparatus equipped with an angular velocity sensor, the angular velocity sensor comprising:
a substrate;
a first electrode film formed on the substrate;
a piezoelectric film represented by Pb 1+X (Zr Y Ti 1−Y )O 3+X (0≦X≦0.3, 0≦Y≦0.55) whose peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less; and
a second electrode film laminated on the piezoelectric film.