Boron-doped diamond semiconductor
First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead.
1. A method of fabricating a boron-doped diamond Schottky diode device, comprising:
growing a first synthetic diamond region doped with boron;
implanting hydrogen at a desired depth into the first synthetic diamond region;
growing a second synthetic diamond region doped with boron in a density different that the boron doping density of the first synthetic diamond region, the second synthetic diamond region grown on the first synthetic diamond region after implantation of hydrogen; and
heating at least the first synthetic diamond region to separate the first synthetic diamond region at the depth of hydrogen implant; and
forming a first metal contact attached to the first synthetic diamond region and a second metal contact attached to the second synthetic diamond region, wherein the less heavily boron-doped synthetic diamond region comprises a cathode of a Schottky diode.
2. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions are fabricated as a monocrystalline synthetic diamond via chemical vapor deposition.
3. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions comprises less than 1 ppm impurities, impurities not including boron.
4. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions comprises less than 1 ppm nitrogen.
5. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2500 W/mK.
6. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 3200 W/mK.
7. The method of claim 1 , wherein at least one of the first and the second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 1%.
8. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.1%.
9. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions is isotopically enhanced with carbon-12 such that the resulting carbon-13 concentration is less than 0.01%.
10. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 50 ppm.
11. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 10 ppm.
12. The method of claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 5 ppm.