Slurry composition and method of fabricating damascene structure using the same
View Patent ↗A slurry composition has an amount of 100% and includes abrasives, an acid-base pH adjustor, an oxidant and water. A content of the abrasives is 10 wt % to 40 wt %, and a polydisperse index of the abrasives sizes is greater than 1.8. A content of the acid-base pH adjustor is 0.01 wt % to 10 wt %. A content of the oxidant is 0.01 wt % to 10 wt %. A remaining portion of the slurry composition is water.
1. A slurry composition, having an amount of 100% and comprising:
abrasives, a content thereof being 10 wt % to 40 wt %, and a polydisperse index of abrasives sizes being greater than 1.8;
an acid-base pH adjustor, a content thereof being 0.01 wt % to 10 wt %;
an oxidant, a content thereof being 0.01 wt % to 10 wt %;
a complexing agent capable of increasing a removal rate of a metal when using the slurry composition, a content thereof being 10 ppm to 500 ppm, wherein the complexing agent comprises at least one of citric acid, oxalic acid, ammonium oxalate, tartaric acid, alanine and glycine, and
water, wherein a remaining portion of the slurry composition is said water.
2. The slurry composition of claim 1 , wherein the content of the abrasives is 15 wt % to 35 wt %.
3. The slurry composition of claim 1 , wherein a material of the abrasives is a silicon dioxide, a metal oxide, a polymer material or hybrids of metal oxides and polymer materials.
4. The slurry composition of claim 3 , wherein the silicon dioxide comprises fumed silica or colloidal silica.
5. The slurry composition of claim 3 , wherein the metal oxide comprises alumina or titania.
6. The slurry composition of claim 1 , wherein the content of the acid-base pH adjustor is 0.1 wt % to 5 wt %.
7. The slurry composition of claim 1 , wherein the acid-base pH adjustor comprises an acid, a base or a combination thereof.
8. The slurry composition of claim 7 , wherein the acid comprises at least one of citric acid, oxalic acid, phosphoric acid, amino trimethyl phosphonic acid, 1-hydroxyethylidene-1,1-diphosphoric acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, nitrilotrismethylenetriphosphonic acid, hexamethylene diamine tetra methylene phosphonic acid, diethylene triamine penta methylene phosphonic acid, hexamethylene triamine penta methylene phosphonic acid, malonic acid, lactic acid, acetic acid, propanic acid, butanoic acid, pentanoic acid, hexanoic acid, succinic acid, adipic acid, malic acid, maleic acid, tartaric acid, methane sulfonic acid, toluenesulfonic acid, dodecylbenzenesulfonic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, nitrilotriacetic acid, N-(hydroxyethyl)-ethylenediaminetriacetic acid and combinations thereof.
9. The slurry composition of claim 7 , wherein the base comprises an inorganic base or organic base.
10. The slurry composition of claim 9 , wherein the inorganic base comprises potassium hydroxide or sodium hydroxide.
11. The slurry composition of claim 1 , wherein a pH value of the slurry composition is pH 9 to 12.
12. The slurry composition of claim 11 , wherein the pH value of the slurry composition is pH 10.5 to 11.5.
13. The slurry composition of claim 1 , wherein the oxidant comprises hydrogen peroxide.
14. The slurry composition of claim 1 , wherein the water comprises deionized water.
15. The slurry composition of claim 1 , wherein the content of the complexing agent is 70 ppm to 500 ppm.
16. The slurry composition of claim 15 , wherein the content of the complexing agent is 70 ppm to 300 ppm.
17. The slurry composition of claim 15 , wherein when using the slurry composition, a polishing selectivity ratio of a barrier material to a metal material is less than or equal to 1.2.
18. The slurry composition of claim 1 , wherein when using the slurry composition, a polishing selectivity ratio of a dielectric material to a metal material is less than 2.
19. The slurry composition of claim 1 , wherein a removal rate of the slurry composition to a dielectric material is greater than 1000 angstroms/minute.
20. The slurry composition of claim 1 , wherein the content of the complexing agent is 40 ppm to 100 ppm.
21. The slurry composition of claim 1 , wherein the complexing agent comprises at least one of oxalic acid, ammonium oxalate, tartaric acid, alanine and glycine.
22. The slurry composition of claim 1 , wherein the complexing agent comprises alanine or glycine.
23. The slurry composition of claim 1 , wherein the oxidant is H 2 O 2 , and a content thereof is 0.2 wt % to 1.5 wt %.