Image sensor and manufacturing method thereof
View Patent ↗An image sensor has a large bridge margin from a repulsive force between adjacent micro lenses having different surface properties. The image sensor has a larger bridge margin with a configuration of a stepped portion between two areas, where the first and the second group of micro lenses are formed, over a planarization layer below these two areas. Thus, a zero gap is realized, where no gap between micro lenses exists, and the fill factor of micro lens is maximized. By the realization of the zero gap, interference effects decrease, noise decreases, and fill factor increases, and thus the sensitivity of an image sensor increases, especially the green sensitivity.
1. A method comprising;
forming a planarization layer over a semiconductor substrate having a light detector and a color filter array;
forming a first group of micro lenses over the planarization layer, which are separated from each other by a specific distance and have a second surface property;
changing the surface property of the first group of micro lenses from the second surface property to a first surface property by performing a process on the first group of micro lenses while forming stepped portions over the planarization layer by etching the first group of micro lenses and areas of the planarization layer where a second group of micro lenses are to be formed; and
forming the second group of micro lenses between the first group of micro lenses, the second group of micro lenses having the second surface property.
2. The method of claim 1 , wherein said changing the second surface property to the first surface property includes exposing the first group of micro lenses to an oxygen plasma.
3. The method of claim 2 , wherein the planarization layer is an insulating film made of one of a photoresist, an oxide film and a nitride film.
4. The method of claim 1 , wherein the first surface property is hydrophilic.
5. The method of claim 1 , wherein the second surface property is hydrophobic.
6. The method of claim 1 , further comprising forming a protective layer over the first group of lenses and the second group of lenses.
7. The method of claim 6 , wherein the protective layer is formed by depositing silicon dioxide at a temperature in a range from 180 to 220° C.