Semiconductor device and method of manufacturing semiconductor device
View Patent ↗The semiconductor device includes an n-channel transistor including n-type source/drain regions and a first gate electrode, a first sidewall insulating film formed on a side wall of the first gate electrode and having a Young's modulus smaller than a Young's modulus of silicon, a p-channel transistor including p-type source/drain regions and a second gate electrode, a second sidewall insulating film formed on a side wall of the second gate electrode and having a Young's modulus larger than the Young's modulus of silicon, a tensile stressor film formed, covering the n-channel transistor, and a compressive stressor film formed, covering the p-channel transistor.
1. A semiconductor device comprising:
a silicon substrate having a first device region and a second device region;
an n-channel transistor including first source/drain regions formed in the first device region with a first channel region sandwiched therebetween, and a first gate electrode formed over the first channel region with a first gate insulating film formed therebetween;
a first sidewall insulating film formed on a side wall of the first gate electrode and having a Young's modulus smaller than a Young's modulus of silicon;
a p-channel transistor including second source/drain regions formed in the second device region with a second channel region formed therebetween, and a second gate electrode formed over the second channel region with a second gate insulating film formed therebetween;
a second sidewall insulating film formed on a side wall of the second gate electrode and having as a whole a Young's modulus larger than the Young's modulus of silicon, the second sidewall insulating film including a first insulating film having a Young's modulus smaller than the Young's modulus of silicon and a second insulating film having a Young's modulus larger than the Young's modulus of silicon;
a tensile stressor film formed covering the n-channel transistor and applying to the first channel region a compressive stress perpendicular to a channel plane and a tensile stress in a channel length direction; and
a compressive stressor film formed covering the p-channel transistor and applying to the second channel region a tensile stress perpendicular to a channel plane and a compressive stress in a channel length direction.
2. The semiconductor device according to claim 1 , wherein
in the first channel region, the compressive stress perpendicular to the channel plane is equal to or more than the tensile stress in the channel length direction, and
in the second channel region, the compressive stress in the channel length direction is larger than the tensile stress perpendicular to the channel plane.
3. The semiconductor device according to claim 1 , wherein
the first sidewall insulating film is formed of the first insulating film and
the second sidewall insulating film has a layer structure of the first insulating film thinner than the first sidewall insulating film formed of the first insulating film, and the second insulating film.
4. The semiconductor device according to claim 1 , wherein
the first sidewall insulating film has a layer structure of the first insulating film, and a third insulating film having a Young's modulus equal to or below the Young's modulus of silicon, and
the second sidewall insulating film has a layer structure of the first insulating film having a film thickness equal to a film thickness of the first insulating film included in the first sidewall insulating film, and the second insulating film.
5. The semiconductor device according to claim 1 , wherein
the first sidewall insulating film has a layer structure of the first insulating film, and the second insulating film, and
the second sidewall insulating film has a layer structure of the first insulating film and the second insulating film, and a ratio of the second insulating film is larger than a ratio thereof in the first sidewall insulating film.
6. The semiconductor device according to claim 1 , wherein
the first sidewall insulating film is formed of the first insulating film, and
the second sidewall insulating film has a layer structure of the first insulating film having a thickness equal to the first sidewall insulating film formed of the first insulating film, and the second insulating film.
7. The semiconductor device according to claim 1 , wherein
the first insulating film is a silicon oxide film; and
the second insulating film is a silicon nitride film.
8. The semiconductor device according to claim 4 , wherein
the third insulating film is a silicon oxynitride film.
9. A semiconductor device comprising:
a silicon substrate having a first device region and a second device region;
an n-channel transistor including first source/drain regions formed in the first device region with a first channel region sandwiched therebetween, and a first gate electrode formed over the first channel region with a first gate insulating film formed therebetween;
a first sidewall insulating film formed on a side wall of the first gate electrode and having a Young's modulus smaller than a Young's modulus of silicon;
a p-channel transistor including second source/drain regions formed in the second device region with a second channel region formed therebetween, and a second gate electrode formed over the second channel region with a second gate insulating film formed therebetween;
a second sidewall insulating film formed on a side wall of the second gate electrode and having a Young's modulus which is larger than the Young's modulus of silicon and is larger than the Young's modulus of the first sidewall insulating film;
a tensile stressor film formed covering the n-channel transistor and applying to the first channel region a compressive stress perpendicular to a channel plane and a tensile stress in a channel length direction; and
a compressive stressor film formed covering the p-channel transistor and applying to the second channel region a tensile stress perpendicular to a channel plane and a compressive stress in a channel length direction, wherein
the first sidewall insulating film is formed of a first insulating film having a Young's modulus smaller than the Young's modulus of silicon, and
the second sidewall insulating film has a layer structure of a first insulating film thinner than the first sidewall insulating film formed of the first insulating film, and a second insulating film having a Young's modulus larger than the Young's modulus of silicon.
10. The semiconductor device according to claim 9 , wherein
the first insulating film is a silicon oxide film; and
the second insulating film is a silicon nitride film.
11. A semiconductor device comprising:
a silicon substrate having a first device region and a second device region;
an n-channel transistor including first source/drain regions formed in the first device region with a first channel region sandwiched therebetween, and a first gate electrode formed over the first channel region with a first gate insulating film formed therebetween;
a first sidewall insulating film formed on a side wall of the first gate electrode and having a Young's modulus smaller than a Young's modulus of silicon;
a p-channel transistor including second source/drain regions formed in the second device region with a second channel region formed therebetween, and a second gate electrode formed over the second channel region with a second gate insulating film formed therebetween;
a second sidewall insulating film formed on a side wall of the second gate electrode and having a Young's modulus which is larger than the Young's modulus of silicon and is larger than the Young's modulus of the first sidewall insulating film;
a tensile stressor film formed covering the n-channel transistor and applying to the first channel region a compressive stress perpendicular to a channel plane and a tensile stress in a channel length direction; and
a compressive stressor film formed covering the p-channel transistor and applying to the second channel region a tensile stress perpendicular to a channel plane and a compressive stress in a channel length direction, wherein
the first sidewall insulating film has a layer structure of a first insulating film having a Young's modulus smaller than the Young's modulus of silicon, and a second insulating film having a Young's modulus larger than the Young's modulus of silicon, and
the second sidewall insulating film has a layer structure of the first insulating film and the second insulating film, and a ratio of the second insulating film is larger than a ratio thereof in the first sidewall insulating film.
12. The semiconductor device according to claim 11 , wherein
the first insulating film is a silicon oxide film; and
the second insulating film is a silicon nitride film.