Semiconductor device and method of manufacturing the semiconductor device
An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AO x1 (A: metal, O: oxygen) using a stoichiometric composition parameter x 1 , and expressed by a chemical formula AO x2 using a actual composition parameter x 2 , and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BO y1 (B: metal) using a stoichiometric composition parameter y 1 and expressed by a chemical formula BO y2 using a actual composition parameter y 2 , which includes at least one of stone-wall crystal and column crystal.
1. A semiconductor device, comprising:
a semiconductor substrate; and
a ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, over the semiconductor substrate,
wherein the upper electrode includes
a first layer formed of a first oxide expressed by a chemical formula AO x1 (A: metal element, O: oxygen) using a stoichiometric composition parameter x 1 and expressed by a chemical formula AO x2 using an actual composition parameter x 2 ,
a second layer formed of a second oxide having a thickness of 125 nm to 150 nm, formed on the first layer, expressed by a chemical formula BO y1 (B: metal element, O: oxygen) using a stoichiometric composition parameter y 1 and expressed by a chemical formula BO y2 using an actual composition parameter y 2 , in which a ratio of oxidation is set higher than the first layer, and
a third layer formed on the second layer and formed of one of noble metal, alloy including noble metal, and oxide of one of noble metal and alloy including noble metal,
wherein a relation y 2 /y 1 >x 2 /x 1 is satisfied between the composition parameters x 1 , x 2 , y 1 , y 2 , and a thickness of the first layer is thinner than a thickness of the second layer.
2. The semiconductor device according to claim 1 , wherein the metal element A of the first layer is formed of a same metal element as the metal element B of the second layer.
3. The semiconductor device according to claim 1 , wherein the metal element A of the first layer is different from the metal element B of the second layer.
4. The semiconductor device according to claim 1 , wherein a metal element of the first layer is identical to a metal element of the third layer.
5. The semiconductor device according to claim 1 , wherein the ferroelectric capacitor is covered with a multilayer interconnection structure formed over the semiconductor substrate, and the second layer is connected via a contact hole with an interconnection pattern in the multilayer interconnection structure.