Demodulation pixel with daisy chain charge storage sites and method of operation therefor
View Patent ↗A demodulation pixel architecture allows for demodulating an incoming modulated electromagnetic wave, normally visible or infrared light. It is based on a charge coupled device (CCD) line connected to a drift field structure. The drift field is exposed to the incoming light. It collects the generated charge and forces it to move to the pick-up point. At this pick-up point, the CCD element samples the charge for a given time and then shifts the charge packets further on in the daisy chain. After a certain amount of shifts, the multiple charge packets are stored in so-called integration gates, in a preferred embodiment. The number of integration gates gives the number of simultaneously available taps. When the cycle is repeated several times, the charge is accumulated in the integration gates and thus the signal-to-noise ratio increases. The architecture is flexible in the number of taps. A dump node can be attached to the CCD line for dumping charge with the same speed as the samples are taken. Different implementations are described herein, which allow for smaller design or faster speed. The pixel structure can be exploited for e.g. 3D time-of-flight imaging. Both heterodyne and homodyne measurements are possible. Due to the highly-efficient charge transport enabled by static drift fields in the photo-sensitive region and small-sized gates in the CCD chain, high frequency bandwidth from just a few Hertz (Hz) up to greater GHz is supported. Thus, the pixel allows for highly-accurate optical distance measurements. Another possible application of this pixel architecture is fluorescence lifetime imaging microscopy (FLIM), where short laser pulses for triggering the fluorescence have to be suppressed.
1. A pixel comprising:
a photosensitive region in which incoming light, including modulated light, is converted into photocharges, a lateral drift field in the photosensitive region transporting the photocharges to a pickup point; and
a non-photosensitive region comprising
a chain of charge storage sites that receives the photocharges from the photosensitive region at the pickup point, wherein charge packets of the photocharges corresponding to different time intervals within a period of a modulation of the modulated light are conveyed through successive charge storage sites of the chain such that the charge packets of the photocharges are conveyed from storage site to storage site through the chain of charge storage sites, and
charge integration sites, wherein each charge integration site is located lateral to a respective charge storage site, the photocharges being transferred from the charge storage sites to the associated charge integration sites.
2. A pixel as claimed in claim 1 , wherein the lateral drift field is generated by overlapping gates structures to which different static potentials are applied.
3. A pixel as claimed in claim 1 , wherein the lateral drift field is generated by built-in static drift fields.
4. A pixel as claimed in claim 1 , further comprising isolation nodes for each of the storage sites that electrically separate the storage sites from each other.
5. A pixel as claimed in claim 4 , wherein the charge storage sites and the isolation nodes are CCD gate structures.
6. A pixel as claimed in claim 1 , wherein the photocharges are transferred from the charge storage sites to the associated charge integration sites and each of the charge integration sites is used to store photocharges generated during different modulation periods and same time intervals of a period of the modulated light.
7. A pixel as claimed in claim 1 , further comprising a dump node for draining photocharges from the pixel.
8. A pixel as claimed in claim 1 , further comprising a dump node at the end of the chain for draining photocharges from the pixel.