Acoustic wave device and electronic equipment using the same
View Patent ↗An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.
1. An acoustic wave device, comprising:
a piezoelectric body;
an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and
a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode,
wherein the dielectric layer includes a composition changing portion made up of a medium in which propagation velocity of a transverse wave continuously or stepwise increases upward.
2. The acoustic wave device according to claim 1 , wherein the composition changing portion includes silicon oxide and silicon nitride, in which the silicon oxide concentration continuously decreases upward and the silicon nitride concentration continuously increases upward.
3. The acoustic wave device according to claim 2 , wherein the composition changing portion further includes silicon oxynitride, and a silicon oxynitride concentration between a lower end and an upper end of the composition changing portion is larger than the silicon oxynitride concentration each at the lower end and the upper end of the composition changing portion.
4. The acoustic wave device according to claim 1 , wherein the piezoelectric body is any one of lithium niobate, lithium tantalate and potassium niobate.
5. The acoustic wave device according to claim 1 , wherein a film thickness of the dielectric layer is larger than 0.8 times as much as a wavelength of the acoustic wave.
6. Electronic equipment, installed with an acoustic wave device according to claim 1 .