Electronic assembly for an image sensing device

1. An electronic assembly for an image sensing device, comprising: a lens set comprising a feet enclosing a cavity; an image sensing element disposed in the cavity; an opaque conductive layer disposed on at least a portion of a top side, a sidewall and a bottom side of the lens set; and a black coating layer between the opaque conductive layer and the lens set, wherein the opaque conductive layer is electrically connected to a grounding layer to reduce electromagnetic interference (EMI) to the image sensing element.

2. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the image sensing element is a chip scale package structure.

3. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the image sensing element is a chip on board package structure.

4. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the image sensing element is a ceramic leaded chip carrier (CLCC).

5. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the lens set is a wafer-level lens cube.

6. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the feet is a spacer at the bottom side of the lens set or a conductive feet connected to the lens set.

7. The electronic assembly for an image sensing device as claimed in claim 6 , wherein the conductive feet is formed of metal with a compatible thermal expansion coefficient (CTE) to the lens set.

8. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the opaque conductive layer comprises aluminum, copper, nickel, silver or stainless steel.

9. The electronic assembly for an image sensing device as claimed in claim 1 , further comprising a transparent conductive layer disposed on a portion of the top side of the lens set for passage of light through the lens set.

10. The electronic assembly for an image sensing device as claimed in claim 9 , wherein the transparent conductive layer comprises indium tin oxide (ITO).

11. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the black coating layer is a black photoresist.

12. The electronic assembly for an image sensing device as claimed in claim 1 , wherein the grounding layer is disposed in a printed circuit board and the opaque conductive layer is electrically connected to the grounding layer through a pad and a plug of the printed circuit board.

13. A wafer-level lens set, comprising: a substrate; a optical surface and stop aperture on the substrate; a first spacer on the substrate; a second spacer under the substrate; an opaque conductive layer covering a top side of the first spacer, sidewalls of the first spacer, sidewalls of the second spacer, and a bottom side of the second spacer; and a black coating layer between the opaque conductive layer and the substrate, the first spacer and the second spacer, wherein the second spacer encloses a cavity and an image sensing element is disposed in the cavity, and the opaque conductive layer reduces electromagnetic interference (EMI) to the image sensing element.

14. The wafer-level lens set as claimed in claim 13 , wherein the image sensing element is a chip scale package structure.

15. The wafer-level lens set as claimed in claim 13 , wherein the image sensing element is a chip on board package structure.

16. The wafer-level lens set as claimed in claim 13 , wherein the image sensing element is a ceramic leaded chip carrier (CLCC).

17. The wafer-level lens set as claimed in claim 13 , wherein a portion of the second spacer is a conductive spacer.

18. The wafer-level lens set as claimed in claim 13 , wherein the opaque conductive layer is bonded to a pad of a printed circuit board.