Thin film transistor array substrate and method of manufacturing the same
View Patent ↗A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
1. A thin film transistor array substrate comprising:
a semiconductive oxide layer on an insulating substrate and including a channel portion;
a gate electrode overlapping the semiconductive oxide layer;
a gate insulating layer between the semiconductive oxide layer and the gate electrode; and
a passivation layer overlapping the semiconductive oxide layer and the gate electrode,
wherein the gate insulating layer and the passivation layer each includes an oxynitride layer, and the oxynitride layer has a concentration of oxygen higher than that of nitrogen along a thickness of the oxynitride layer, as a location along the thickness is closer to the semiconductive oxide layer.
2. The thin film transistor array substrate of claim 1 , wherein the oxynitride layer comprises silicon oxynitride, aluminum oxynitride, titanium oxynitride, zirconium oxynitride, hafnium oxynitride, tantalum oxynitride, or tungsten oxynitride.
3. The thin film transistor array substrate of claim 1 , wherein the semiconductive oxide layer comprises an oxide selected from an element group consisting of Zn, In, Ga, Sn and combinations thereof.
4. The thin film transistor array substrate of claim 1 , wherein
the gate insulating layer interposed between the semiconductive oxide layer and the gate electrode is disposed directly on and contacting the gate electrode, the gate electrode being disposed between the gate insulating layer and the insulating substrate,
the semiconductive oxide layer is disposed directly on and contacting the gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and
the passivation layer is disposed directly on and contacting the semiconductive oxide layer contacting the gate insulating layer.
5. The thin film transistor array substrate of claim 1 , wherein
the gate insulating layer interposed between the semiconductive oxide layer and the gate electrode is disposed directly on and contacting the semiconductive oxide layer,
the gate electrode is disposed directly on and contacting the gate insulating layer, the gate insulating layer being disposed between the gate electrode and the insulating substrate, and
the passivation layer is disposed directly on and contacting the gate electrode.
6. The thin film transistor array substrate of claim 5 , wherein the gate insulating layer comprises an oxynitride layer.