Semiconductor device and RFID tag chip
View Patent ↗The present invention provides a reference power supply circuit which does not require trimming and prevents occurrence of deadlock of a band gap reference circuit. An RFID tag chip related to the present invention has a reference power supply including a switch for switching between a band gap reference circuit and a Vth difference reference circuit. A reference potential in band gap reference of the band gap reference circuit and an output of the Vth difference reference circuit are compared by a comparator, and a transistor operating as a switch is controlled, thereby making the reference potential in band gap reference rise, hastening startup of the band gap reference circuit, and preventing occurrence of deadlock in the band gap reference circuit.
1. A semiconductor device comprising:
a reference voltage generating circuit including a first reference voltage generating circuit, a second reference voltage generating circuit, and an output switch for switching between an output of the first reference voltage generating circuit and an output of the second reference voltage generating circuit,
wherein the output switch switches between an output of the second reference voltage generating circuit and an output of the first reference voltage generating circuit in accordance with an input switch signal,
wherein the second reference voltage generating circuit is a threshold-difference-using-type reference voltage generating circuit which uses the difference between two kinds of thresholds of metal oxide semiconductor (MOS-FET),
a comparator for detecting a potential difference between an output of the threshold-difference-using-type reference voltage generating circuit and a reference potential in a band gap reference of a band gap reference circuit; and
a transistor,
wherein when the reference potential in the band gap reference is smaller than the output of the threshold-difference-using-type reference voltage generating circuit, current flows in the transistor to increase the reference potential in the band gap reference.
2. A semiconductor device comprising,
a reference voltage generating circuit including a first reference voltage generating circuit, a second reference voltage generating circuit, and an output switch for switching between an output of the first reference voltage generating circuit and an output of the second reference voltage generating circuit,
wherein the output switch switches between an output of the second reference voltage generating circuit and an output of the first reference voltage generating circuit in accordance with an input switch signal,
wherein the second reference voltage generating circuit is a threshold-difference-using-type reference voltage generating circuit which uses the difference between two kinds of thresholds of metal oxide semiconductor (MOS-FET),
a comparator for detecting a potential difference between an output of the threshold-difference-using-type reference voltage generating circuit and a reference potential in a band gap reference of the band gap reference circuit; and
a transistor,
wherein when the reference potential in the band gap reference is smaller than the output of the threshold-difference-using-type reference voltage generating circuit, current flows in the transistor to increase the reference potential in the band gap reference,
wherein the band gap reference circuit outputs a reference voltage of a reference oscillation circuit by using the reference potential in the band gap reference,
wherein the band gap reference circuit cancels temperature dependency of the reference potential in the band gap reference by an operational-amplifier-type band gap reference circuit and the transistor.
3. An RFID tag chip comprising the reference voltage generating circuit described in claim 1 ,
wherein an output of the reference voltage generating circuit is used as a reference voltage of a regulator, and a power supply voltage is output from a rectifier circuit.
4. An RFID tag chip comprising the reference voltage generating circuit described in claim 2 ,
wherein an output of the reference voltage generating circuit is used as a reference voltage of a regulator, and a power supply voltage is output from a rectifier circuit.
5. An RFID tag chip comprising:
a reference voltage generating circuit including a first reference voltage generating circuit, a second reference voltage generating circuit, and an output switch for switching between an output of the first reference voltage generating circuit and an output of the second reference voltage generating circuit,
wherein the output switch switches between an output of the second reference voltage generating circuit and an output of the first reference voltage generating circuit in accordance with an input switch signal,
wherein the second reference voltage generating circuit is a threshold-difference-using-type reference voltage generating circuit which uses the difference between two kinds of thresholds of metal oxide semiconductor (MOS-FET),
a comparator for detecting a potential difference between an output of the threshold-difference-using-type reference voltage generating circuit and a reference potential in a band gap reference of the band gap reference circuit; and
a transistor,
wherein when the reference potential in the band gap reference is smaller than the output of the threshold-difference-using-type reference voltage generating circuit, current flows in the transistor to increase the reference potential in the band gap reference,
wherein an output of the reference voltage generating circuit is used as a reference voltage of a regulator, and a power supply voltage is output from a rectifier circuit.
6. An RFID tag chip comprising:
a reference voltage generating circuit including a first reference voltage generating circuit, a second reference voltage generating circuit, and an output switch for switching between an output of the first reference voltage generating circuit and an output of the second reference voltage generating circuit,
wherein the output switch switches between an output of the second reference voltage generating circuit and an output of the first reference voltage generating circuit in accordance with an input switch signal,
wherein the second reference voltage generating circuit is a threshold-difference-using-type reference voltage generating circuit which uses the difference between two kinds of thresholds of metal oxide semiconductor (MOS-FET),
a comparator for detecting a potential difference between an output of the threshold-difference-using-type reference voltage generating circuit and a reference potential in a band gap reference of the band gap reference circuit; and
a transistor,
wherein when the reference potential in the band gap reference is smaller than the output of the threshold-difference-using-type reference voltage generating circuit, current flows in the transistor to increase the reference potential in the band gap reference,
wherein the band gap reference circuit outputs a reference voltage of a reference oscillation circuit by using the reference potential in the band gap reference,
wherein an output of the reference voltage generating circuit is used as a reference voltage of a regulator, and a power supply voltage is output from a rectifier circuit.
7. The semiconductor device according to claim 1 ,
wherein the switch signal is output from the reference voltage generating circuit, and
wherein the output switch detects an input clock signal and switches the switch signal.
8. The semiconductor device according to claim 2 ,
wherein the switch signal is output from the reference voltage generating circuit, and
wherein the output switch detects an input clock signal and switches the switch signal.
9. The RFID tag chip according to claim 5 ,
wherein the switch signal is output from the reference voltage generating circuit, and
wherein the output switch detects an input clock signal and switches the switch signal.
10. The RFID tag chip according to claim 6 ,
wherein the switch signal is output from the reference voltage generating circuit, and
wherein the output switch detects an input clock signal and switches the switch signal.