IP Library Granted Patent US 8,134,240
Granted Patent B2
US 8,134,240 · App. 12/557,986 · Granted Mar 13, 2012

Semiconductor device and manufacturing method for the same

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Quick Facts
Patent No.
US 8,134,240
App. No.
12/557,986
Granted
Mar 13, 2012
Kind
B2
Abstract

To provide a small, high-performance semiconductor device in which contact between adjacent wires is prevented for increased flexibility in designing a wiring layout, and an efficient method for manufacturing the semiconductor device. The semiconductor device includes a substrate 10 having an electrode 21 A arranged on its surface; and a first semiconductor element 11 A which includes an electrode 22 arranged on its surface and which is supported by the substrate 10 , wherein a first wire 41 is connected through a first bump 31 to at least one of the electrodes over the substrate 10 and semiconductor element 11 A (i.e., at least one of the electrodes 21 and 22 ), and a second wire 42 is connected through a second bump 32 to a bonding portion of the wire 41.

Claims (11)

1. A semiconductor device, comprising:

a substrate having an electrode arranged on a surface thereof;

a first semiconductor element which has at least one electrodes arranged on a surface thereof and which is supported by the substrate;

a first bump arranged on the at least one of the electrodes arranged on the first semiconductor element;

a first wire connected through the first bump;

at least one second bump arranged on a bonding portion of the first wire to the first bump;

a third bump arranged directly on the second bump; and

a second wire connected through the third bump or a fourth bump arranged on the third bump to the second bump.

2. The semiconductor device according to claim 1 , wherein the first wire is stitch-bonded to the first bump, and the second wire is stitch-bonded to the third bump.

3. The semiconductor device according to claim 1 , further comprising:

a second semiconductor element which has an electrode arranged on a surface thereof and which is supported by the first semiconductor element.