PROCESS FOR PRODUCING ELECTRICAL CONDUCTOR

1 . A process for producing an electrical conductor, which comprises a laminate-forming step of forming a precursor laminate having a first precursor layer and a second precursor layer laminated in an optional order on a substrate, and an annealing step of heating the precursor laminate in a reducing atmosphere for annealing to form a metal oxide layer from the first precursor layer and the second precursor layer, wherein:

the first precursor layer is a titanium oxide layer made of titanium oxide containing at least one dopant selected from the group consisting of Nb, Ta, Mo, As, Sb, Al, Hf, Si, Ge, Zr, W, Co, Fe, Cr, Sn, Ni, V, Mn, Tc, Re, P and Bi, and the titanium oxide layer is a titanium oxide layer which, when subjected to a single layer annealing test, becomes a titanium oxide layer containing a polycrystal which is free from a rutile type crystal, and

the second precursor layer is an amorphous titanium oxide layer made of titanium oxide containing at least one dopant selected from the above group, and the amorphous titanium oxide layer is an amorphous titanium oxide layer which, when subjected to a single layer annealing test, becomes a titanium oxide layer containing a polycrystal which contains a rutile type crystal.

2 . The process for producing an electrical conductor according to claim 1 , wherein the content of dopant atoms in each of the first precursor layer and the second precursor layer is at least 1 atomic % and at most 10 atomic % based on the total amount of dopant atoms and titanium atoms.

3 . The process for producing an electrical conductor according to claim 1 , wherein the first precursor layer has a thickness of at least 5 nm and at most 50 nm, the second precursor layer has a thickness of at least 15 nm, and the metal oxide layer has a thickness of from 20 to 1,000 nm.

4 . The process for producing an electrical conductor according to claim 1 , wherein the laminate-forming step has steps of forming the first precursor layer and the second precursor layer, respectively, by a sputtering method, and the concentration of an oxidizing sputtering gas in an atmosphere gas for forming the second precursor layer is lower than the concentration of the oxidizing sputtering gas in an atmosphere gas for forming the first precursor layer.

5 . The process for producing an electrical conductor according to claim 1 , wherein the laminate-forming step has steps of forming the first precursor layer and the second precursor layer, respectively, by a sputtering method, and the content of oxygen atoms in a target used for forming the second precursor layer is lower than the content of oxygen atoms in a target used for forming the first precursor layer.

6 . The process for producing an electrical conductor according to claim 1 , wherein in the annealing step, the precursor laminate is heated in a hydrogen atmosphere or in a vacuum atmosphere.

7 . The process for producing an electrical conductor according to claim 1 , wherein in the annealing step, the precursor laminate is held at a temperature of from 250 to 850° C. for at least one minute.

8 . The process for producing an electrical conductor according to claim 1 , wherein in the annealing step, the precursor laminate is heated from the first precursor layer side.

9 . A transparent electrode employing an electrical conductor obtained by the process as defined in claim 1 .

10 . A transparent electrically conductive film employing an electrical conductor obtained by the process as defined in claim 1 .

11 . An electromagnetic wave shielding product employing an electrical conductor obtained by the process as defined in claim 1 .

12 . An antistatic film employing an electrical conductor obtained by the process as defined in claim 1 .

13 . A heat reflective glass employing an electrical conductor obtained by the process as defined in claim 1 .

14 . An ultraviolet reflective glass employing an electrical conductor obtained by the process as defined in claim 1 .

15 . A process for producing an electrical conductor, which comprises a laminate-forming step of forming a precursor laminate having a first precursor layer and a second precursor layer laminated in an optional order on a substrate, and an annealing step of heating the precursor laminate in a reducing atmosphere for annealing to form a metal oxide layer from the first precursor layer and the second precursor layer, wherein:

the first precursor layer is a titanium oxide layer made of titanium oxide containing at least one dopant selected from the group consisting of Nb, Ta, Mo, As, Sb, Al, Hf, Si, Ge, Zr, W, Co, Fe, Cr, Sn, Ni, V, Mn, Tc, Re, P and Bi, and the titanium oxide of the titanium oxide layer is titanium oxide which has an absorption coefficient of larger than 0 cm −1 and less than 2×10 4 cm −1 at a wavelength of 800 nm, and

the second precursor layer is an amorphous titanium oxide layer made of titanium oxide containing at least one dopant selected from the above group, and the titanium oxide of the amorphous titanium oxide layer is titanium oxide which has an absorption coefficient of at least 2×10 4 cm −1 and less than 5×10 4 cm −1 at a wavelength of 800 nm.

16 . The process for producing an electrical conductor according to claim 15 , wherein the content of dopant atoms in each of the first precursor layer and the second precursor layer is at least 1 atomic % and at most 10 atomic % based on the total amount of dopant atoms and titanium atoms.

17 . The process for producing an electrical conductor according to claim 15 , wherein the first precursor layer has a thickness of at least 5 nm and at most 50 nm, the second precursor layer has a thickness of at least 15 nm, and the metal oxide layer has a thickness of from 20 to 1,000 nm.

18 . The process for producing an electrical conductor according to claim 15 , wherein the laminate-forming step has steps of forming the first precursor layer and the second precursor layer, respectively, by a sputtering method, and the concentration of an oxidizing sputtering gas in an atmosphere gas for forming the second precursor layer is lower than the concentration of the oxidizing sputtering gas in an atmosphere gas for forming the first precursor layer.

19 . The process for producing an electrical conductor according to claim 15 , wherein the laminate-forming step has steps of forming the first precursor layer and the second precursor layer, respectively, by a sputtering method, and the content of oxygen atoms in a target used for forming the second precursor layer is lower than the content of oxygen atoms in a target used for forming the first precursor layer.

20 . The process for producing an electrical conductor according to claim 15 , wherein in the annealing step, the precursor laminate is heated in a hydrogen atmosphere or in a vacuum atmosphere.

21 . The process for producing an electrical conductor according to claim 15 , wherein in the annealing step, the precursor laminate is held at a temperature of from 250 to 850° C. for at least one minute.

22 . The process for producing an electrical conductor according to claim 15 , wherein in the annealing step, the precursor laminate is heated from the first precursor layer side.

23 . A transparent electrode employing an electrical conductor obtained by the process as defined in claim 15 .

24 . A transparent electrically conductive film employing an electrical conductor obtained by the process as defined in claim 15 .

25 . An electromagnetic wave shielding product employing an electrical conductor obtained by the process defined in claim 15 .

26 . An antistatic film employing an electrical conductor obtained by the process as defined in claim 15 .

27 . A heat reflective glass employing an electrical conductor obtained by the process as defined in claim 15 .

28 . An ultraviolet reflective glass employing an electrical conductor obtained by the process as defined in claim 15 .