IP Library Granted Patent US 9,246,034
Granted Patent B2
US 9,246,034 · App. 12/562,907 · Granted Jan 26, 2016

Solar cell and method of manufacturing the same

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Quick Facts
Patent No.
US 9,246,034
App. No.
12/562,907
Granted
Jan 26, 2016
Kind
B2
Abstract

A method of manufacturing a solar cell, including: forming a first conductivity type semiconductor layer extending along a predetermined direction on aback surface of a semiconductor substrate that has a light-receiving surface and the back surface opposite to the light-receiving surface, the first-conductivity-type semiconductor layer being divided into plural island-shaped sections arranged side by side in the predetermined direction; forming a semiconductor layer of a second conductivity type in the predetermined direction on the back surface; and forming conductive layers respectively on the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer by using a conductive paste, the conductive layer to be formed on the first-conductivity-type semiconductor layer being formed by a printing method such that the conductive layer to be formed on the first-conductivity-type semiconductor layer extends on a line of the plural island-shaped sections to bridge adjacent two of the plural island-shaped sections.

Claims (6)

1. A method of manufacturing a solar cell, comprising:

a step A of forming a semiconductor layer of a first conductivity type extending along a predetermined direction on a back surface of a semiconductor substrate of the first conductivity type that includes a light-receiving surface and with the back surface located on an opposite side to the light-receiving surface, the first-conductivity-type semiconductor layer being divided into plural island-shaped sections side by side in the predetermined direction, the first-conductivity-type semiconductor layer being formed using a metal mask including: plural slits corresponding to the plural island-shaped sections; and a divide portion between adjacent two of the slits;

a step B of forming a semiconductor layer of a second conductivity type in the predetermined direction on the back surface so as to have a width that is larger than a width of the first-conductivity-type semiconductor layer; and

a step C of forming a conductive layer respectively on the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer by using a conductive paste, the conductive layer to be formed on the first-conductivity-type semiconductor layer being formed by a printing method such that a conductive layer to be formed on the first-conductivity-type semiconductor layer extends on a line of the plural island-shaped sections to bridge directly adjacent two of the plural island-shaped sections.

2. The method of manufacturing a solar cell according to claim 1 , wherein forming the semiconductor layer of the first conductivity type is done by chemical vapor deposition (CVD).

3. The method of manufacturing a solar cell according to claim 2 , wherein forming the semiconductor layer of the second conductivity type is done by CVD.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2015
From: SANYO ELECTRIC CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 035071/0276 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2015
From: PANASONIC CORPORATION
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 035071/0508 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2009
From: IDE, DAISUKE
To: SANYO ELECTRIC CO., LTD.
Reel/Frame 023255/0743 →