Image sensor and method for manufacturing the same
View Patent ↗Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a first pixel having a first photodiode and a first readout circuit and a second pixel having a second photodiode and a second readout circuit. The second pixel is aligned at one side of the first pixel, and a light receiving area of the first photodiode is different from a light receiving area of the second photodiode.
1. An image sensor comprising:
a first pixel including a first photodiode formed in a substrate and a first readout circuit formed over the substrate; and
a second pixel including a second photodiode formed in the substrate and a second readout circuit formed over the substrate, the second pixel being aligned at one side of the first pixel,
wherein a size of a light receiving area of the first photodiode is different from a size of a light receiving area of the second photodiode.
2. The image sensor of claim 1 , wherein a threshold voltage of a first drive transistor of the first readout circuit is different from a threshold voltage of a second drive transistor of the second readout circuit.
3. The image sensor of claim 2 , wherein a width of the first drive transistor of the first readout circuit is different from a width of the second drive transistor of the second readout circuit.
4. The image sensor of claim 2 , wherein a channel ion implantation for the first drive transistor of the first readout circuit is different from a channel ion implantation for the second chive transistor of the second readout circuit.
5. The image sensor of claim 1 , wherein a channel length of a first drive transistor of the first readout circuit is different from a channel length of a second drive transistor of the second readout circuit.
6. A method for forming an image sensor according to claim 1 , the method comprising:
forming a first pixel including a first photodiode and a first readout circuit; and
forming a second pixel including a second photodiode and a second readout circuit at one side of the first pixel,
wherein the size of a light receiving area of the first photodiode is different from the size of a light receiving area of the second photodiode.
7. The method of claim 6 , wherein forming the first pixel and forming the second pixel comprises:
making a threshold voltage of a first drive transistor of the first readout circuit different from a threshold voltage of a second drive transistor of the second readout circuit.
8. The method of claim 6 , wherein forming the first pixel and forming the second pixel comprises:
making a channel length of a first drive transistor of the first readout circuit different from a channel length of a second drive transistor of the second readout circuit.
9. The method of claim 8 , wherein making the channel length of the first drive transistor of the first readout circuit different from the channel length of the second drive transistor of the second readout circuit comprises:
forming a width of the first drive transistor of the first readout circuit different from a width of the second drive transistor of the second readout circuit.
10. The method of claim 8 , wherein making the channel length of the first drive transistor of the first readout circuit different from the channel length of the second drive transistor of the second readout circuit comprises:
performing a channel ion implantation for the second drive transistor of the second readout circuit differently than a channel ion implantation for the first drive transistor of the first readout circuit.
11. The method of claim 10 , wherein performing the channel ion implantation for the second drive transistor of the second readout circuit differently than the channel ion implantation for the first drive transistor of the first readout circuit comprises:
performing an initial channel ion implantation for the second drive transistor of the second readout circuit; and
performing an additional channel ion implantation for the second drive transistor of the second readout circuit.
12. The method of claim 11 , wherein the additional channel ion implantation for the second drive transistor of the second readout circuit employs ions having a type identical to a type of ions used in performing the initial channel ion implantation for the second drive transistor of the second readout circuit.
13. The method of claim 11 , wherein the additional channel ion implantation for the second drive transistor of the second readout circuit employs ions having a type opposite to a type of ions used in performing the initial channel ion implantation for the second drive transistor of the second readout circuit.