IP Library Granted Patent US 8,617,799
Granted Patent B2
US 8,617,799 · App. 12/563,683 · Granted Dec 31, 2013

Post arrays and methods of making the same

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Quick Facts
Patent No.
US 8,617,799
App. No.
12/563,683
Granted
Dec 31, 2013
Kind
B2
Abstract

In general, in one aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, the mask feature having a surface comprising a depression, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. In general, in another aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. The first layer is composed of an amorphous material and the first structure is a post having a base side-wall angle of in a range from about 60 degrees to about 80 degrees.

Claims (31)

1. A method of manufacturing an optically transmissive material, comprising:

forming layer of a mask material on a surface of a first layer;

patterning the layer of the mask material to obtain a mask feature, the mask feature having a surface comprising a depression;

inducing mass transport of the mask material of the mask feature to obtain a modified mask feature;

transferring a profile of the modified mask feature into the first layer to form a post array, in which individual posts have: (a) a top portion having an indentation resulting from the depression; and (b) angled or curved sides resulting from induction of the mass transport; and

forming a layer of a second material on a surface of at least an individual one of the posts to form a lens.

2. The method according to claim 1 , wherein inducing mass transport of the mask feature comprises inducing reflow of the mask feature.

3. The method according to claim 2 , wherein inducing reflow of the mask feature comprises heating the mask feature above a glass transition temperature of the mask material.

4. The method according to claim 3 , wherein inducing reflow of the mask feature reduces a contact angle of the mask feature to between 60 and 80 degrees.

5. The method according to claim 4 , further comprising cooling the modified mask feature to inhibit reflow prior to transferring the profile of the modified mask feature.

6. The method according to claim 1 , wherein transferring the profile into the first layer comprises etching the first layer.

7. The method according to claim 6 , wherein transferring the profile into the first layer comprises anisotropically etching the first layer.

8. The method according to claim 7 , wherein the anisotropic etching comprises reactive ion etching.

9. The method according to claim 1 , wherein the layer of the second material is formed using atomic layer deposition.

10. The method according to claim 9 , wherein the lens comprises multiple layers of different dielectric materials.

11. The method of claim 1 , wherein the first layer is composed of an amorphous material.

12. The method of claim 11 , wherein the amorphous material is an inorganic, amorphous material.

13. The method of claim 11 , wherein the amorphous material is a glass.

14. The method according to claim 1 , further comprising applying a hydrophobic monolayer to the surface of the first layer prior to depositing the mask material.

15. The method according to claim 1 , further comprising applying a hydrophilic monolayer to the surface of the first layer prior to depositing the mask material.

16. The method according to claim 1 , wherein patterning the mask material comprises applying photolithography to the mask material.

17. The method according to claim 16 , wherein applying photolithography comprises using a brightfield mask between a light source and the mask material.

18. The method according to claim 1 , wherein patterning the mask material further comprises pre-shaping the mask feature.

19. The method according to claim 18 , wherein pre-shaping the mask feature comprises plasma etching the mask feature.

20. A method of manufacturing an optically transmissive material, comprising:

forming a layer of a mask material on a surface of a first layer;

patterning the layer of the mask material to obtain a mask feature;

inducing mass transport of the mask material of the mask feature to obtain a modified mask feature;

transferring a profile of the modified mask feature into the first layer to form a post array, and

forming a layer of a second material on a surface of at least an individual one of the posts to form a lens;

wherein each of the posts has (a) a base side-wall angle in a range from about 60 degrees to about 80 degrees, and (b) a top portion having a depression.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Apr 20, 2018
From: BNP PARIBAS, AS COLLATERAL AGENT
To: API TECHNOLOGIES CORP.
Reel/Frame 045604/0054 →
SECURITY INTEREST Recorded Apr 22, 2016
From: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.; SPECTRUM MICROWAVE, INC.; API DEFENSE, INC.
To: BNP PARIBAS, AS COLLATERAL AGENT
Reel/Frame 038351/0207 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2013
From: NANTOPTICS LLC
To: API TECHNOLOGIES CORP.
Reel/Frame 030894/0291 →