IP Library Granted Patent US 8,506,827
Granted Patent B2
US 8,506,827 · App. 12/563,824 · Granted Aug 13, 2013

Short pitch metal gratings and methods for making the same

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Quick Facts
Patent No.
US 8,506,827
App. No.
12/563,824
Granted
Aug 13, 2013
Kind
B2
Abstract

Methods for forming a metal grating include providing a first grating including a plurality of grating lines formed from a dielectric material, each grating having a pair of sidewalls, facing sidewalls of adjacent grating lines being separated by corresponding trenches, the grating lines and trenches forming a grating surface; forming a layer of a metal on the grating surface, where the metal layer has a constant thickness and conforms to the grating surface; and removing portions of the metal layer between sidewalls of adjacent grating lines of the first grating to form a metal grating having grating lines formed from the metal, the grating lines of the metal grating corresponding to the portions of the metal layer adjacent the sidewalls of the grating lines of the first grating. The metal grating has a pitch of 200 nm or less, a depth of 50 nm or more, and the grating lines of the metal grating have an aspect ratio of 10-to-1 or more.

Claims (28)

1. A method, comprising:

providing a first grating including a plurality of grating lines formed from a dielectric material, each grating having a pair of sidewalls, facing sidewalls of adjacent grating lines being separated by corresponding trenches, the grating lines and trenches forming a grating surface; forming a layer of a metal on the grating surface, where the metal layer has a constant thickness and conforms to the grating surface;

and removing portions of the metal layer between sidewalls of adjacent grating lines of the first grating to form a metal grating having grating lines formed from the metal, the grating lines of the metal grating corresponding to the portions of the metal layer adjacent the sidewalls of the grating lines of the first grating, wherein the metal grating has a pitch of 200 nm or less, a depth of 50 nm or more, and the grating lines of the metal grating have an aspect ratio of 10-to-1 or more.

2. The method of claim 1 , wherein the metal layer is formed using atomic layer deposition.

3. The method of claim 2 , wherein the using atomic layer deposition comprises sequentially forming a plurality of intermediate layers of the metal on the grating surface, each of the intermediate layers conforming to the grating lines.

4. The method of claim 3 , wherein forming each of the intermediate layers comprises introducing a reagent into a chamber housing the first grating and forming a plasma from the reagent.

5. The method of claim 1 , wherein the metal layer is formed using chemical vapor deposition.

6. The method of claim 5 , wherein the chemical vapor deposition is performed at a pressure less than 1 torr.

7. The method of claim 1 , wherein providing the first grating comprises forming a layer of the dielectric material on a substrate and removing portions of the layer to form the first grating.

8. The method of claim 1 , wherein providing the first grating comprises removing portions of a substrate composed of the dielectric material to provide the first grating.

9. The method of claim 1 , wherein the dielectric material is an inorganic dielectric material.

10. The method of claim 1 , wherein the metal is aluminum, tungsten, copper, gold, or silver.

11. The method of claim 1 , wherein the portions of the metal layer are removed by etching of the metal layer.

12. The method of claim 11 , wherein etching is reactive ion etching.

13. The method of claim 1 , wherein the metal grating has a pitch of 100 nm or less.

14. The method of claim 1 , wherein the grating lines of the metal grating have an aspect ratio of 15-to-1 or more.

15. The method of claim 1 , wherein the metal grating has a depth in a range from 100 nm to 500 nm.

16. The method of claim 1 , wherein the grating lines of the metal grating have a line width in a range from 5 nm to 40 nm.

17. The method of claim 1 , wherein the grating lines of the metal grating have a line width of 15 nm or less.

18. The method of claim 1 , further comprising forming layers of one or more additional materials over the metal grating lines.

19. A method, comprising:

providing a first grating including a plurality of grating lines formed from a dielectric material, each grating having a pair of sidewalls, facing sidewalls of adjacent grating lines being separated by corresponding trenches, the grating lines and trenches forming a grating surface;

forming a layer of a metal on the grating surface, where the metal layer has a constant thickness and conforms to the grating surface;

and removing portions of the metal layer between sidewalls of adjacent grating lines to form a metal grating having grating lines formed from the metal, the grating lines of the metal grating corresponding to the portions of the metal layer adjacent the sidewalls of the grating lines of the first grating layer, wherein the metal grating has a pitch of 200 nm or less, a depth of 50 nm or more, and the grating lines of the metal grating have a line width of 30 nm or less.

20. A method, comprising:

providing a first grating including a plurality of grating lines formed from a dielectric material, each grating having a pair of sidewalls, facing sidewalls of adjacent grating lines being separated by corresponding trenches, the grating lines and trenches forming a grating surface;

forming a layer of a metal on the grating surface using atomic layer deposition, where the metal layer has a constant thickness and conforms to the grating surface;

and removing portions of the metal layer between sidewalls of adjacent grating lines to form a metal grating having grating lines formed from the metal, the grating lines of the metal grating corresponding to the portions of the metal layer adjacent the sidewalls of the grating lines of the first grating layer, wherein the second grating has a pitch of 200 nm or less and a depth of 50 nm or more.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2016
From: POLARIZATION SOLUTIONS, LLC.
To: USHIO DENKI KABUSHIKI KAISHA
Reel/Frame 040255/0079 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2012
From: NANTOPTICS, LLC
To: POLARIZATION SOLUTIONS, LLC
Reel/Frame 029438/0661 →
CHANGE OF NAME Recorded Dec 10, 2012
From: ABRAXIS BIOSENSORS, LLC
To: NANTOPTICS, LLC
Reel/Frame 029441/0526 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2010
From: FISH & RICHARDSON P.C.
To: API NANOFABRICATION AND RESEARCH CORP.
Reel/Frame 024964/0677 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2010
From: API NANOFABRICATION AND RESEARCH CORPORATION
To: ABRAXIS BIOSENSORS, LLC
Reel/Frame 024964/0001 →
LIEN Recorded Mar 24, 2010
From: API NANOFABRICATION AND RESEARCH CORP.
To: FISH & RICHARDSON P.C.
Reel/Frame 024128/0344 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2009
From: WU, QIHONG; LIU, SHENG; ZHANG, XU; TAI, SHIAW-WEN; DU, XIAOHUA; TOMBLER, THOMAS
To: API NANOFABRICATION AND RESEARCH CORP.
Reel/Frame 023388/0488 →