Method for forming silicide of semiconductor device
View Patent ↗A silicide forming method for a semiconductor device. A silicide forming method may include forming a gate electrode by depositing a gate oxide film and/or polysilicon over a silicon substrate and patterning. A silicide forming method may include forming a nitride film spacer over sidewalls of a gate electrode and simultaneously performing source/drain implant and amophization implant over a silicon substrate. A silicide forming method may include depositing an insulating film after performing source/drain and amophization implants. A silicide forming method may include partially and/or entirely exposing a source/drain and/or gate electrode disposed under an insulating film by etching an insulating film. A silicide forming method may include applying a metal film over a silicon substrate and forming silicide over regions etched by performing heat treatment over a source/drain and/or gate electrode.
1. A method comprising:
depositing a gate oxide film and polysilicon over a silicon substrate;
patterning at least one of said gate oxide film and polysilicon to form a gate electrode;
forming a spacer over said gate electrode;
simultaneously performing a source/drain implant and an amorphization implant over the substrate, wherein said simultaneously performing source/drain implant and amorphization implant comprises molecule implant using ionized molecules;
depositing an insulating film after performing said source/drain implant and amorphization implant;
exposing at least a portion of said source/drain and a portion of said gate electrode disposed under said insulating film by etching regions of said insulating film;
applying a metal film over said insulating film and the exposed portion of said source/drain and gate electrode; and
forming silicide over the etched regions by performing heat treatment over said source/drain and gate electrode.
2. The method of claim 1 , wherein said insulating film comprises Plasma Enhanced-Tetra Ethyl Ortho Silicate.
3. The method of claim 1 , wherein said metal film comprises at least one of Ti, Co and Ni.
4. The method of claim 1 , wherein the atomic mass of said ionized molecules is greater than silicon.
5. The method of claim 4 , wherein said ionized molecules comprise boron.
6. The method of claim 5 , wherein said ionized molecules comprise boron compounds including at least one of decaborane and octadecaborane.
7. The method of claim 6 , comprising an implantation energy between approximately 10 keV and 20 keV.
8. The method of claim 6 , comprising a dose of said boron compounds between approximately 1E-15 ions/cm 3 and 5E-15 ions/cm 3 .
9. The method of claim 6 , comprising octadecaborane having an ion injection energy at approximately 20 keV and a boron ion injection energy at approximately 1 keV.
10. A method comprising:
depositing a gate oxide film and polysilicon over a silicon substrate;
patterning at least one of said gate oxide film and polysilicon to form a gate electrode;
forming a spacer over said gate electrode;
simultaneously performing a source/drain implant and an amorphization implant over the substrate, wherein said simultaneously performing source/drain implant and amorphization implant comprises molecule implant using ionized molecules;
applying a metal film over the substrate to form silicide after said performing source/drain implant and amorphization implant; and
forming silicide over the source/drain and the gate electrode comprising by performing a heat treatment over said applied metal film.
11. The method of claim 10 , wherein said metal film comprises at least one of Ti, Co and Ni.
12. The method of claim 10 , comprising:
depositing an insulating film over the silicide layer formed on the substrate; and
forming a contact over a region comprising the silicide.
13. The method of claim 12 , wherein said insulating film comprises Plasma Enhanced-Tetra Ethyl Ortho Silicate.