Semiconductor device, method of manufacturing thereof, circuit board and electronic apparatus
View Patent ↗A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.
1. A semiconductor device comprising:
a semiconductor element including a substrate having a plurality of electrodes formed on a circumferential region thereof;
a first wiring coupled to one of the electrodes and extending in a first direction away from the circumferential region;
a terminal provided nearest the circumferential region;
a second wiring coupled between the first wiring and the terminal, the second wiring extending in a second direction toward the circumferential region from a portion where the first wiring is coupled to the second wiring; and
at least one resin layer formed between the first wiring and the second wiring,
wherein the terminal is provided nearer the circumferential region than the portion where the first wiring is coupled to the second wiring; and
the first wiring is formed above the substrate, the at least one resin layer is formed above the substrate and the first wiring, the second wiring is formed above the at least one resin layer and the first wiring, and the terminal is provided on the second wiring.
2. The semiconductor device according to claim 1 , wherein the semiconductor device is packaged with a chip size packaging method.
3. The semiconductor device according to claim 1 , wherein the external terminals comprise solder balls.
4. The semiconductor device according to claim 1 , wherein the first wirings and the second wirings are connected via a bore hole in the at least one resin layer.
5. The semiconductor device according to claim 1 , wherein the semiconductor device is cut from a silicon wafer by dicing.
6. The semiconductor device according to claim 5 , wherein the at least one resin layer is spaced apart from a portion of the silicon wafer to be cut during dicing.
7. The semiconductor device according to claim 1 , wherein the at least one resin layer is formed in a region in which the electrodes are formed.
8. A circuit substrate including the semiconductor device according to claim 1 .
9. An electronic apparatus including the semiconductor device according to claim 1 .
10. A semiconductor device comprising:
a semiconductor element including a substrate having a plurality of electrodes formed on a circumferential region thereof;
a first wiring coupled to one of the electrodes and extending in a first direction toward a bore hole in the semiconductor element from a portion coupled to the electrode;
a terminal provided nearest the circumferential region;
a second wiring coupled to the first wiring via an internal wall of the bore hole and coupled to the terminal, the second wiring extending in a second direction toward the circumferential region from the bore hole; and
at least one resin layer formed between the first wiring and the second wiring;
wherein the terminal is provided nearer the circumferential region than a portion where the first wiring is coupled to the second wiring, and
the first wiring is formed above the substrate, the at least one resin layer is formed above the substrate and the first wiring, the second wiring is formed above the at least one resin layer and the first wiring, and the terminal is provided on the second wiring.