Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
1. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a layered structure layer, said layered structure layer including at least one layer including a wide-gap semiconductor material;
(b) depositing a nucleating layer over at least a portion of said layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof; and
(c) depositing a synthetic diamond layer over said nucleating layer.
2. The method of claim 1 , wherein said nucleating layer includes silicon nitride.
3. The method of claim 1 , wherein said nucleating layer includes atoms selected from the group consisting of silicon, nitrogen, carbon, and aluminum.
4. The method of claim 2 , wherein said wide-gap semiconductor material is gallium nitride.
5. The method of claim 1 , wherein said layered structure layer has a first growth direction, and said synthetic diamond layer has a second growth direction opposite to the first growth direction.
6. The method of claim 5 , wherein said nucleating layer has the second growth direction.
7. The method of claim 4 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, super-luminescent diodes, laser diodes, and light-emitting diodes.
8. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a first wafer including a substrate layer and a first layered structure layer disposed over said substrate layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
(b) disposing an adhesive layer over said first layered structure layer;
(c) bonding a second wafer to said adhesive layer;
(d) removing said substrate layer;
(e) depositing a nucleating layer over said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
(f) depositing a synthetic diamond layer over said nucleating layer;
(g) removing said second wafer; and
(h) removing said adhesive layer.
9. The method of claim 8 , wherein said nucleating layer includes silicon nitride.
10. The method of claim 9 , wherein said wide-gap semiconductor material is gallium nitride.
11. The method of claim 10 , further comprising the steps of:
(i) removing a part of said first layered structure layer; and
(j) depositing at least one metal contact on the remaining first layered structure layer.
12. The method of claim 8 , wherein said nucleating layer includes atoms selected from the group consisting of silicon, nitrogen, carbon, and aluminum.
13. The method of claim 11 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, super-luminescent diodes, laser diodes, and light-emitting diodes.
14. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a first wafer including a substrate layer and a first layered structure layer disposed over said substrate layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
(b) disposing an adhesive layer over said first layered structure layer;
(c) bonding a second wafer to said adhesive layer;
(d) removing said substrate layer;
(e) removing a part of said first layered structure layer;
(f) depositing a nucleating layer over said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
(g) depositing a synthetic diamond layer over said nucleating layer;
(h) removing said second wafer; and
(i) removing said adhesive layer.
15. The method of claim 14 , further comprising the step of:
(j) epitaxially growing a second layered structure layer over said first layered structure layer, said second layered structure including at least one layer formed of said wide-gap semiconductor material.
16. The method of claim 15 , wherein said wide-gap semiconductor material is gallium nitride.
17. The method of claim 16 , further comprising the steps of:
(k) removing a part of said second layered structure layer; and
(l) depositing at least one metal contact on the remaining second layered structure layer.
18. The method of claim 17 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, super-luminescent diodes, laser diodes, and light-emitting diodes.
19. The method of claim 14 , wherein said nucleating layer includes atoms selected from the group consisting of silicon, nitrogen, carbon, and aluminum.
20. The method of claim 15 , wherein said first layered structure layer has a first growth direction, and said synthetic diamond layer has a second growth direction opposite to the first growth direction.
21. The method of claim 20 , wherein said nucleating layer has the second growth direction.
22. The method of claim 15 , wherein said first layered structure layer has a first growth direction, said second layered structure layer has the first growth direction, and said synthetic diamond layer has a second growth direction opposite to said first growth direction.
23. The method of claim 22 , wherein said nucleating layer has the second growth direction.
24. The method of claim 1 , wherein said nucleating layer is polycrystalline silicon.
25. The method of claim 1 , wherein said wide-gap semiconductor material is aluminum nitride.
26. The method of claim 8 , wherein said nucleating layer is polycrystalline silicon.
27. The method of claim 8 , wherein said wide-gap semiconductor material is silicon carbide.
28. The method of claim 14 , further comprising the steps of:
(j) removing a part of said first layered structure layer; and
(k) depositing at least one metal contact on the remaining first layered structure layer.
29. The method of claim 28 , wherein said semiconductor device is selected from the group consisting of high-electron mobility transistors, super-luminescent diodes, laser diodes, and light-emitting diodes.