Method of manufacturing monolithic parallel interconnect structure
View Patent ↗An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.
1. A process for fabricating an optoelectronic device, said process comprising: conveying a web comprising a continuous unpatternted anode layer through a roll to roll apparatus while forming a patterned electroactive layer on the continuous unpatterned anode layer; and forming a patterned cathode layer on the electroactive layer; wherein portions of the electroactive layer are selectively removed in a direction parallel the direction of the web transport; and the cathode layer is deposited solely on portions of the electroactive layer remaining after selectively removing portions thereof without stopping to form a cross-web pattern.
2. A process according to claim 1 , additionally comprising forming a plurality of electrical connections to the continuous unpatterned anode layer;
wherein at least one of the plurality of electrical connections passes through one of the plurality of vias.
3. A process according to claim 1 , wherein the step of forming a patterned electroactive layer on the continuous unpatterned anode layer comprises:
depositing an electroactive layer on the continuous unpatterned anode layer; and
selectively removing portions of the electroactive layer.
4. A process according to claim 1 , wherein an anode bus layer is deposited simultaneously with the cathode layer solely on exposed areas of the anode.
5. A process according to either of claim 1 , additionally comprising
forming a feedthrough layer comprising at least one feedthrough aperture to the discontinuous cathode; and
disposing at least one conductive patch electrically coupled to the continuous anode across at least one feedthrough aperture.
6. A process according to claim 1 , additionally comprising disposing an insulating layer on the discontinuous cathode layer, disposing a conducting layer on the insulating layer, and electrically coupling the conducting layer to the continuous anode layer.
7. A process according to claim 1 , additionally comprising disposing a plurality of areas of conducting material directly on the anode layer, electrically isolated from the cathode layer, and electrically coupled to the anode layer.
8. A process according to claim 1 , wherein the patterned cathode layer is configured in a plurality of ribbon-like structures.
9. A process according to claim 1 , additionally comprising disposing at least one anode bus region directly on a portion of the continuous unpatterned anode layer.
10. A process according to claim 1 , wherein the optoelectronic device is an organic light emitting device.