Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×10 18 cm −3 and even greater than about 1×10 19 cm −3 , in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.
1. A method of trimming a resonant frequency of a micro-electromechanical resonator, comprising:
heating a semiconductor resonator body having at least one mass-loading metal layer thereon for a first duration sufficient to convert at least a portion of the semiconductor resonator body into a eutectic alloy comprising metal from the at least one mass-loading metal layer;
wherein at least a portion of the semiconductor resonator body is degenerately doped with boron.
2. The method of claim 1 , wherein the semiconductor resonator body is anchored to a substrate on opposite sides thereof using a pair of supports; wherein said heating comprises passing a current through the pair of supports.
3. A method of fabricating a micro-electromechanical resonator, comprising:
forming a degenerately boron-doped resonator body opposite a recess in a semiconductor substrate, said resonator body having an aluminum metal layer on a surface thereof;
packaging the boron-doped resonator body within a sealed chamber that shares an ambient with the recess in the semiconductor substrate; and
resistance heating the packaged boron-doped resonator body for a sufficient duration to convert at least a portion of the boron-doped resonator body into a eutectic alloy comprising aluminum from the aluminum metal layer.
4. The method of claim 3 , wherein said forming comprises forming a degenerately boron-doped resonator body having first and second supports that anchor opposing sides of the boron-doped resonator body to the semiconductor substrate; and wherein said resistance heating comprises passing a current through the first and second supports.
5. A method of fabricating a micro-electromechanical resonator, comprising:
forming a boron-doped monocrystalline silicon resonator body opposite a recess in a semiconductor substrate, said resonator body having an aluminum metal layer on a surface thereof;
packaging the boron-doped resonator body within a sealed chamber that shares an ambient with the recess in the semiconductor substrate; and
resistance heating the packaged boron-doped resonator body for a sufficient duration to convert a majority of the boron-doped resonator body into a eutectic alloy comprising aluminum from the aluminum metal layer and non-monocrystalline silicon.
6. A method of trimming a resonant frequency of a micro-electromechanical resonator, comprising:
heating a boron-doped semiconductor resonator body having at least one mass-loading metal layer thereon for a first duration sufficient to convert at least a majority of the semiconductor resonator body into a eutectic alloy comprising metal from the at least one mass-loading metal layer.
7. The method of claim 6 , wherein said heating comprises heating the boron-doped semiconductor resonator body at a temperature greater than about 360° C.
8. A method of trimming a resonant frequency of a micro-electromechanical resonator, comprising:
heating a boron-doped monocrystalline silicon resonator body having at least one mass-loading metal layer thereon for a first duration sufficient to convert at least a majority of the monocrystalline silicon resonator body into a eutectic alloy comprising a combination of metal from the at least one mass-loading metal layer and non-monocrystalline silicon.
9. A method of increasing a resonant frequency of a micro-electromechanical resonator, comprising:
heating a boron-doped semiconductor resonator body having at least one mass-loading metal layer thereon for a duration sufficient to convert at least a majority of the semiconductor resonator body into a eutectic alloy comprising metal from the at least one mass-loading metal layer.
10. The method of claim 9 , wherein the at least one mass-loading metal layer comprises gold (Au).
11. The method of claim 10 , wherein said heating comprises heating the boron-doped semiconductor resonator body at a temperature greater than about 360° C.