Flip chip interconnect method and design for GaAs MMIC applications
View Patent ↗A monolithic microwave integrated circuit (MMIC) flip chip interconnect is formed by coating an active side of the chip with a dielectric coating, such as benzocyclobutene (BCB), that inhibits deposition of metal plating materials. A portion of the dielectric coating is removed to expose bond pads on the active side of the chip, stud bumps are bonded to the bond pads, and the active side is then plated with first and second consecutive metal plating materials, such as nickel and gold, respectively, that do not adhere to the dielectric coating. The chip is then oriented such that the plated stud bumps on the active side of the chip face bond pads on a substrate, and the stud bumps on the chip are bonded to the bond pads on the substrate.
1. A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising:
a MMIC chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side;
a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip;
a plurality of stud bumps bonded to said surface bond pads on said MMIC chip;
a first layer of a first plating material plating said stud bumps;
a second layer of a second plating material plating said first layer;
a solder bond connecting said plated stud bumps to said surface bond pads on said substrate; and
a tab mounted on said MMIC chip, wherein said tab is covered on at least one side with said first and second plating materials.
2. The flip chip interconnect of claim 1 , wherein said first plating material is nickel.
3. The flip chip interconnect of claim 2 , wherein said second plating material is gold.
4. The flip chip interconnect of claim 3 , wherein said MMIC chip is formed from a GaAs wafer.
5. The flip chip interconnect of claim 4 , wherein said substrate is a low temperature cofired ceramic substrate.
6. The flip chip interconnect of claim 5 , wherein said dielectric coating is benzocyclobutene (BCB).
7. The flip chip interconnect of claim 1 , wherein said tab has a coefficient of thermal expansion comparable to said chip.
8. The flip chip interconnect of claim 7 , wherein said tab is mounted on a side of said chip opposite the active side of said chip.
9. A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising:
a MMIC chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side;
a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond ads on said MMIC chip;
a plurality of stud bumps bonded to said surface bond pads on said MMIC chip;
a first layer of a first plating material plating said stud bumps;
a second layer of a second plating material plating said first layer; and
a solder bond connecting said plated stud bumps to said surface bond pads on said substrate, wherein exposed edges of said chip are covered with said first and second plating materials.
10. A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising:
a MMIC chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side;
a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip;
a plurality of stud bumps bonded to said surface bond pads on said MMIC chip;
a first layer of a first plating material plating said stud bumps;
a second layer of a second plating material plating said first layer; and
a solder bond connecting said plated stud bumps to said surface bond pads on said substrate, wherein an exposed peripheral portion of the active side of said chip adjacent dicing streets is covered with said first and second plating materials.