Method and system for performing materials analysis with reflected inelastic scatter
View Patent ↗A method for performing materials analysis of an object using an X-ray system includes generating an X-ray beam using an X-ray source having an anode and acquiring a scatter spectrum from Compton scatter produced when the X-ray beam interacts with the object. The scatter spectrum is acquired using an energy resolving detector. A Compton profile is extracted from the scatter spectrum by processing the scatter spectrum using a control system of the X-ray system. The Compton profile includes peaks at characteristic lines of the anode. The method further includes identifying a characteristic of a material of the object using the Compton profile, and outputting an indication of the characteristic of the material.
1. A method for performing materials analysis of an object using an X-ray system, said method comprising:
generating an X-ray beam using an X-ray source having an anode;
acquiring a scatter spectrum from Compton scatter produced when the X-ray beam interacts with the object, the scatter spectrum acquired using an energy resolving detector;
extracting a Compton profile from the scatter spectrum by processing the scatter spectrum using a control system of the X-ray system, the Compton profile including peaks at characteristic lines of the anode;
identifying a characteristic of a material of the object using the Compton profile; and
outputting an indication of the characteristic of the material.
2. A method in accordance with claim 1 , wherein acquiring a scatter spectrum from Compton scatter comprises:
irradiating the object with a pencil beam;
collimating the Compton scatter to be a predetermined angle with respect to a direction of the pencil beam; and
recording the scatter spectrum of the Compton scatter at the predetermined angle using the energy resolving detector.
3. A method in accordance with claim 1 , wherein extracting a Compton profile comprises:
normalizing the scatter spectrum;
correcting the normalized scatter spectrum by removing a background signal from the normalized scatter spectrum; and
extracting the Compton profile from the normalized and corrected scatter spectrum.
4. A method in accordance with claim 3 , wherein normalizing the scatter spectrum comprises dividing a number of detected photons in each energy bin within a first predetermined range by a total number of detected photons summed over a plurality of energy bins within a second predetermined range that is different than the first predetermined range.
5. A method in accordance with claim 1 , wherein extracting a Compton profile comprises:
deconvolving the scatter spectrum;
removing a finite energy resolution of the energy resolving detector and a doublet structure of the characteristic lines of the anode from the scatter spectrum; and
yielding features of the scatter spectrum for material identification.
6. A method in accordance with claim 1 , wherein extracting a Compton profile comprises:
assuming a Compton profile for the acquired scatter spectrum;
synthesizing a simulated scatter spectrum from the assumed Compton profile;
comparing the simulated scatter spectrum with the acquired scattered spectrum to produce a difference signal;
iteratively correcting the assumed Compton profile using the difference signal to produce a corrected Compton profile; and
yielding features of the scatter spectrum for material identification based on the corrected Compton profile.
7. A method in accordance with claim 6 , wherein synthesizing a simulated scatter spectrum from the assumed Compton profile comprises superposing a predetermined number of Gaussian functions.
8. A method in accordance with claim 1 , wherein extracting a Compton profile comprises:
processing the scatter spectrum using a plurality of Gaussians, each Gaussian of the plurality of Gaussians including a peak amplitude and a width; and
yielding features of the scatter spectrum for material identification based on the peak amplitudes and the widths of the plurality of Gaussians.
9. An X-ray system for analyzing an object, said X-ray system comprising:
an X-ray source comprising an anode and at least one source focus, said X-ray source configured to generate an X-ray beam at said at least one source focus, said anode configured to generate characteristic lines;
an energy resolving detector positioned with respect to said at least one source focus, said energy resolving detector configured to record Compton scatter produced from the X-ray beam interacting with the object, the Compton scatter at an angle to a direction of the X-ray beam; and
a control system operationally coupled to said X-ray source and said energy resolving detector, said control system configured to:
acquire a scatter spectrum from the Compton scatter using said energy resolving detector;
extract a Compton profile from the scatter spectrum by processing the scatter spectrum, the Compton profile including peaks at the characteristic lines of said anode; and
identify a characteristic of a material of the object using the Compton profile.
10. An X-ray system in accordance with claim 9 , further comprising a primary collimator configured to produce sequentially a plurality of pencil beams from a source focus to scan the object.
11. An X-ray system in accordance with claim 9 , further comprising a secondary collimator configured to collimate the Compton scatter to be at the angle for detection by said energy resolving detector.
12. An X-ray system in accordance with claim 9 , wherein said anode comprises a tungsten (W) anode that generates a W Kα1 line and a W Kα2 line as the characteristic lines.
13. An X-ray system in accordance with claim 9 , wherein said energy resolving detector comprises a Schottky contacted cadmium telluride (CdTe) detector configured to provide energy resolutions of about 1% full width at half maximum (FWHM) at 60 kilo-electronvolts (keV).
14. An X-ray system in accordance with claim 9 , wherein said energy resolving detector comprises a semiconductor detector configured to provide an energy resolution greater than 2% FWHM at 60 keV.
15. An X-ray system in accordance with claim 9 , wherein a Z-axis of said X-ray system defines an axis of symmetry, said at least one source focus and said energy resolving detector positioned on said axis of symmetry.
16. An X-ray system in accordance with claim 9 , further comprising:
an axis of symmetry; and
a primary collimator configured to produce a pencil beam at said at least source focus, said primary collimator rotationally symmetric about said axis of symmetry.
17. An X-ray system in accordance with claim 9 , further comprising:
an axis of symmetry; and
a secondary collimator configured to collimate the Compton scatter to be at the angle, said secondary collimator rotationally symmetric about said axis of symmetry.
18. An X-ray system in accordance with claim 9 , wherein the angle is at least 150°.
19. An X-ray system in accordance with claim 9 , wherein said control system is further configured to:
normalize the scatter spectrum;
correct the normalized scatter spectrum by removing a background signal from the normalized scatter spectrum; and
extract the Compton profile from the normalized and corrected scatter spectrum.
20. An X-ray system in accordance with claim 9 , wherein said control system is further configured to:
process the scatter spectrum using a plurality of Gaussians, each Gaussian of the plurality of Gaussians including a peak amplitude and a width; and
yield features of the scatter spectrum for material identification based on the peak amplitudes and the widths of the plurality of Gaussians.