Image sensor including two image sensing devices in a pixel and method for manufacturing the same
View Patent ↗An image sensor is provided. The image sensor comprises a readout circuitry, a first image sensing device, an interconnection, and a second image sensing device. The readout circuitry is disposed in a first substrate. The first image sensing device is disposed at one side of the readout circuitry of the first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The second image sensing device is disposed over the interconnection.
1. An image sensor comprising:
a readout circuitry in a first substrate;
a first image sensing device of a pixel at one side of the readout circuitry of the first substrate;
an interconnection over the first substrate and electrically connected to the readout circuitry; and
a second image sensing device of the pixel over the interconnection and electrically connected to the readout circuitry through the interconnection,
wherein the second image sensing device of the pixel is formed at a region of the pixel except are region vertically positioned over the first image sensing device of the same pixel.
2. The image sensor according to claim 1 , wherein the readout circuitry comprises a first floating diffusion region for photo charge dumping for the first image sensing device and a second floating diffusion region for photo charge dumping for the second image sensing device, wherein the first floating diffusion region and the second floating diffusion region have the same electric potential.
3. The image sensor according to claim 1 , further comprising:
an electrical junction region electrically connected to the readout circuitry at a second side of the readout circuitry, and
a first conductive type connection between the electrical junction region and the interconnection for electrically connecting the interconnection to the electrical junction region.
4. The image sensor according to claim 3 , wherein the electrical junction region comprises:
a first conductive type ion implantation region over the first substrate; and
a second conductive type ion implantation region over the first conductive type ion implantation region.
5. The image sensor according to claim 3 , wherein the first conductive type connection is disposed at an upper part of the electrical junction region.
6. The image sensor according to claim 3 , wherein the first conductive type connection is disposed at one side of the electrical junction region.
7. The image sensor according to claim 3 , wherein the readout circuitry comprises a transistor, wherein the electrical junction region is disposed at a source of the transistor to provide a potential difference between the source and a drain of the transistor.
8. The image sensor according to claim 7 , wherein the transistor is a transfer transistor, and an ion implantation concentration of the transistor's source is smaller than an ion implantation concentration of a floating diffusion region at the transistor's drain.
9. A method for manufacturing an image sensor, comprising:
forming a readout circuitry in a first substrate;
forming a first image sensing device of a pixel at one side of the readout circuitry of the first substrate;
forming an interconnection over the first substrate and electrically connected to the readout circuitry; and
forming a second image sensing device of the pixel over the interconnection,
wherein forming the second image sensing device of the pixel comprises forming the second image sensing device in the pixel at a region of the pixel except a region vertically positioned over the first image sensing device of the same pixel.
10. The method according to claim 9 , wherein forming the readout circuitry comprises forming a first floating diffusion region for photo charge dumping for the first image sensing device and forming a second floating diffusion region for photo charge dumping for the second image sensing device, wherein the first floating diffusion region and the second floating diffusion region are formed to have the same electric potential.
11. The method according to claim 9 , further comprising forming an electrical junction region electrically connected to the readout circuitry at a second side of the readout circuitry before the forming of the interconnection.
12. The method according to claim 11 , further comprising forming a first conductive type connection between the electrical junction region and the interconnection for electrically connecting the interconnection to the electrical junction region.