SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT CHIP
A semiconductor device including a plurality of circuit regions formed in a semiconductor substrate and a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and an optically-transparent insulation film formed between and on the plurality of metal films, wherein a first metal film included in a first upper interlayer film of the plurality of interlayer films is positionally offset in a vertical direction to a second metal film included in a second lower interlayer film under the first interlayer film.
1 . A semiconductor device comprising:
a plurality of circuit regions formed in a semiconductor substrate; and
a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and an optically-transparent insulation film formed between and on the plurality of metal films,
wherein a first metal film included in a first upper interlayer film of the plurality of interlayer films is positionally offset in a vertical direction to a second metal film included in a second lower interlayer film under the first interlayer film.
2 . The semiconductor device according to claim 1 , wherein only a portion of the first metal film directly overlaps the second metal film in a vertical direction, and the first metal film is connected to the second metal film in the overlapping portion by a conductive member.
3 . The semiconductor device according to claim 1 , wherein the plurality of metal films are composed of a plurality of strip-shaped metal films disposed in parallel with each other.
4 . The semiconductor device according to claim 1 , wherein the plurality of metal films are composed of a plurality of rectangular metal films disposed in an island state.
5 . The semiconductor device according to claim 1 , wherein the optically-transparent insulation film is transparent to a laser beam.
6 . The semiconductor device according to claim 1 , wherein the optically-transparent insulation film is a silicon oxide film or a silicon oxide nitride film.
7 . The semiconductor device according to claim 1 , wherein the first metal film is interposed between at least two second metal films.
8 . The semiconductor device according to claim 1 , further comprising a third metal film included in a third interlayer film under the second interlayer film,
wherein the third metal film is located at a position where it does not directly overlap the second metal film, and
the first metal film is located at a position where it does not directly overlap the second and third metal films.
9 . A method of manufacturing a semiconductor chip, comprising a step of radiating a laser beam to a first metal film and a second metal film at the same time and exploding the first and second metal films in a semiconductor substrate;
said substrate having a plurality of circuit regions and a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and optically-transparent insulation films formed between and on the plurality of metal films, wherein the first metal film is included in a first upper interlayer film of the plurality of interlayer films and is located at a position where it does not directly overlap the second metal film included in a second lower interlayer film under the first interlayer film in a vertical direction.
10 . The method of manufacturing a semiconductor chip according to claim 9 , further comprising a step of cutting off the scribe region using a blade.