Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer
View Patent ↗Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.
1. A method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate, the method comprising:
forming a hard mask layer over the insulator layer;
performing a first patterning process to form a pole and yoke opening in the hard mask layer;
performing a second patterning process comprising forming a photoresist pattern on the hard mask layer, the photoresist pattern exposing the rounded corners of the pole and yoke opening in the hard mask layer, and removing a portion of the hard mask layer exposed by the photoresist pattern to remove the rounded corners of the pole and yoke opening in the hard mask layer;
removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer; and
filling the trench with a magnetic material.
2. The method of claim 1 , wherein the step of removing the portion of the insulator layer comprises:
performing reactive ion etching on the portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer.
3. The method of claim 1 , wherein the step of removing the portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer comprises:
forming a second hard mask layer over the insulator layer prior to forming the first hard mask layer, wherein the first hard mask layer is formed over the second hard mask layer;
transferring the pole and yoke opening from the first hard mask layer to the second hard mask layer; and
removing a portion of the insulator layer exposed by the pole and yoke opening in the second hard mask layer.
4. The method of claim 3 , wherein the step of performing the first patterning process comprises:
forming a photoresist pattern on the second hard mask layer prior to forming the first hard mask layer, wherein the first hard mask layer is formed over the second hard mask layer and the photoresist pattern;
removing a portion of the first hard mask layer along one or more sides of the photoresist pattern; and
lifting off the photoresist pattern from the second hard mask layer.
5. The method of claim 4 , wherein the step of performing the second patterning process comprises:
forming a second photoresist pattern on the first hard mask layer, the second photoresist pattern exposing the rounded corners of the pole and yoke opening in the first hard mask layer; and
removing a portion of the first hard mask exposed by the second photoresist to the remove rounded corners of the pole and yoke opening in the first hard mask layer.
6. The method of claim 1 , wherein the hard mask layer comprises a hard mask material selected from a group consisting of tantalum and ruthenium.
7. The method of claim 1 , wherein the insulator layer comprises alumina.